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HPA01085DVBR

Texas Instruments

HPA01085DVBR by Texas Instruments

Texas Instruments' HPA01085DVBR is a BICMOS technology-based LDO regulator with 4.75V output voltage and 0.2A max current. Operating b/w -40°C to 125°C, it has a compact design with GULL WING terminals for surface mounting applications in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,256 parts In-Stock

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Digiode

USA . 2,661 parts In-Stock

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2,661

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Distributors (Availability)

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Parana Technologies

USA . 1,426 parts In-Stock

1+ parts

$8.443

100+ parts

-

1k+ parts

$9.086

10k+ parts

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1,426

$8.443

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$9.086

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DigiPath Technology Company

USA . 11 parts In-Stock

1+ parts

$9.297

100+ parts

$8.553

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-

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11

$9.297

$8.553

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IDEA Electronic Components Group

UK . 902 parts In-Stock

1+ parts

$9.487

100+ parts

$9.013

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$8.538

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902

$9.487

$9.013

$8.538

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ChromeModa Solutions

Germany . 310 parts In-Stock

1+ parts

$9.487

100+ parts

$7.779

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-

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310

$9.487

$7.779

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One Stop Electronics

USA . 1,129 parts In-Stock

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$14.500

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1,129

$14.500

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Ampacity Inc.

Singapore . 454 parts In-Stock

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$15.500

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454

$15.500

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AZTECH Wire

Italy . 822 parts In-Stock

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$16.151

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822

$16.151

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Semicontronic

India . 1,299 parts In-Stock

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$20.500

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$19.988

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$19.885

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1,299

$20.500

$19.988

$19.885

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Corphita

USA . 4,832 parts In-Stock

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4,832

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Microchip USA

USA . 1,816 parts In-Stock

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Corohmni

South Africa . 216 parts In-Stock

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Overview

Enhance your electronic designs with the HPA01085DVBR by Texas Instruments, a top-tier manufacturer known for their high-quality components. This Fixed Regulator offers a reliable solution for various applications, providing a stable output voltage and efficient performance. With its compact design and advanced BICMOS technology, this LDO regulator delivers consistent results while maintaining a low dropout voltage. Trust in Texas Instruments to deliver superior products like the HPA01085DVBR that offer value, benefits, and unmatched advantages to customers seeking top-notch electronic solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the regulator, ensuring a longer lifespan for the product.

Nominal Output Voltage-1: 4.75 V

A stable and reliable output voltage of 4.75V makes this regulator suitable for various electronic applications requiring a specific voltage level.

Maximum Output Current-1: 0.2 A

With a maximum output current of 0.2A, this regulator can power low to moderate power electronic devices efficiently.

Operating Temperature (TJ-Max): 125 °C

The high operating temperature range of up to 125°C allows this regulator to function effectively in demanding thermal conditions.

Adjustability: FIXED

The fixed adjustability ensures that the output voltage remains constant, eliminating the need for manual adjustments and simplifying the design process.

Technical Specifications

Fixed Regulators - Positive Single Output LDO HPA01085DVBR attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Texas Instruments

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.125 V

Nominal Dropout Voltage-1:

.077 V

Maximum Input Voltage:

5.5 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.2 A

Nominal Output Voltage-1:

4.75 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.45 mm

Surface Mount:

YES

Technology:

BICMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

HPA01085DVBR Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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