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DS90UH302QSQX/NOPB

Texas Instruments

DS90UH302QSQX/NOPB by Texas Instruments

LINE RECEIVER; Terminal Finish: NICKEL PALLADIUM GOLD; Peak Reflow Temperature (C): 260; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 30;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,650 parts In-Stock

1+ parts

-

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8,650

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Digiode

USA . 3,542 parts In-Stock

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3,542

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 172 parts In-Stock

1+ parts

$1.057

100+ parts

-

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172

$1.057

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Northwest PG Solutions

USA . 1,774 parts In-Stock

1+ parts

$1.162

100+ parts

-

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1,774

$1.162

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Parana Technologies

USA . 1,556 parts In-Stock

1+ parts

$5.445

100+ parts

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1k+ parts

$6.156

10k+ parts

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1,556

$5.445

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$6.156

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DigiPath Technology Company

USA . 1,338 parts In-Stock

1+ parts

$5.996

100+ parts

$5.516

1k+ parts

-

10k+ parts

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1,338

$5.996

$5.516

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ChromeModa Solutions

Germany . 2,676 parts In-Stock

1+ parts

$6.118

100+ parts

$5.017

1k+ parts

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2,676

$6.118

$5.017

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IDEA Electronic Components Group

UK . 60 parts In-Stock

1+ parts

$6.118

100+ parts

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$5.506

10k+ parts

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60

$6.118

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$5.506

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AZTECH Wire

Italy . 378 parts In-Stock

1+ parts

$9.770

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378

$9.770

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One Stop Electronics

USA . 573 parts In-Stock

1+ parts

$27.500

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573

$27.500

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Corphita

USA . 2,183 parts In-Stock

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2,183

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Technical Specifications

Line Drivers & Receivers DS90UH302QSQX/NOPB attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Interface IC Type:

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Peak Reflow Temperature (C):

260

Terminal Finish:

NICKEL PALLADIUM GOLD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DS90UH302QSQX/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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