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DS90CP02SPX

Texas Instruments

DS90CP02SPX by Texas Instruments

DS90CP02SPX by Texas Instruments is a CMOS cross point switch with 2 channels. It operates at industrial temperature grade (-40 to 85 °C) and has a supply voltage range of 3-3.6 V. This multiplexer, in a square chip carrier package, offers fast switching times (150 ns on, 12 ns off) for various applications requiring high-speed signal routing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,407 parts In-Stock

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Anansix

USA . 1,921 parts In-Stock

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Digiode

USA . 1,548 parts In-Stock

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One Stop Electronics

USA . 1,160 parts In-Stock

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$0.500

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$0.500

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AZTECH Wire

Italy . 510 parts In-Stock

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$12.149

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510

$12.149

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Parana Technologies

USA . 397 parts In-Stock

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$16.555

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$16.831

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397

$16.555

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$16.831

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IDEA Electronic Components Group

UK . 725 parts In-Stock

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$18.601

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$17.671

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$16.741

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725

$18.601

$17.671

$16.741

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ChromeModa Solutions

Germany . 66 parts In-Stock

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$18.601

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$15.253

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66

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$15.253

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Glotronic Ltd.

UK . 3,500 parts In-Stock

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Corphita

USA . 3,304 parts In-Stock

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DigiPath Technology Company

USA . 2,300 parts In-Stock

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$16.771

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$16.771

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Northwest PG Solutions

USA . 148 parts In-Stock

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$3.405

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$3.405

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Native Components

USA . 22 parts In-Stock

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$3.370

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Overview

Enhance your electronic systems with the DS90CP02SPX by Texas Instruments, a top-tier manufacturer known for quality and reliability. This multiplexer/switch offers seamless integration, precise performance, and versatility in various applications. With a compact package body, high-speed operation, and industrial-grade temperature range, this chip carrier ensures optimal functionality and durability. Upgrade your designs with the value and benefits that the DS90CP02SPX provides, delivering superior results and efficiency to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the product, ensuring long-term reliability.

Surface Mount: YES

Allows for easy installation and integration into various electronic systems without the need for through-hole mounting.

Nominal Supply Voltage (Vsup): 3.3 V

Operates at a standard supply voltage, making it compatible with a wide range of applications.

No. of Terminals: 28

Provides multiple connection points for versatile configuration options in a circuit.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, making it suitable for industrial applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed performance.

Technical Specifications

Multiplexers & Switches DS90CP02SPX attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-PQCC-N28

JESD-609 Code:

e0

Length:

5 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

12 ns

Maximum Switch-on Time:

150 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width (mm):

5 mm

Trade Compliance

DS90CP02SPX Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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