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DS26C32ATM

Texas Instruments

DS26C32ATM by Texas Instruments

DS26C32ATM by Texas Instruments is a line driver with 4 functions, operating at 5V. It has a max output low current of 6A and receiver with 4 bits. Ideal for EIA-422 and EIA-423 interfaces in industrial applications due to its CMOS technology and wide temperature range from -40°C to 85°C.

Median Price

$3.080

Lifecycle Status

Suppliers In-Stock

64

In-Stock Inventory

1k+

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Component Electronics Inc.

Canada . 714 parts In-Stock

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American Microsemiconductor Inc.

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Ampacity Inc.

Singapore . 147 parts In-Stock

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Parana Technologies

USA . 1,601 parts In-Stock

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$2.701

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DigiPath Technology Company

USA . 1,029 parts In-Stock

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$2.219

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ChromeModa Solutions

Germany . 6,291 parts In-Stock

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$2.461

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$2.018

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IDEA Electronic Components Group

UK . 637 parts In-Stock

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One Stop Electronics

USA . 459 parts In-Stock

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$6.500

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AZTECH Wire

Italy . 779 parts In-Stock

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Semicontronic

India . 1,313 parts In-Stock

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$19.988

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$19.885

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Advanced Electronics

New Zealand . 4,483 parts In-Stock

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$133.900

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Overview

Enhance your electronic designs with the DS26C32ATM line driver & receiver from Texas Instruments. Crafted with precision and expertise, this product offers reliability and performance that exceeds industry standards. Perfect for a wide range of applications, this device provides seamless connectivity and efficient data transmission. With its compact design and advanced technology, the DS26C32ATM delivers exceptional value and benefits to customers looking for high-quality components. Upgrade your projects today with Texas Instruments' top-of-the-line line driver & receiver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability to the product, making it suitable for various applications.

Surface Mount: YES

Allows for easy installation and integration onto circuit boards.

Maximum Supply Voltage: 5.5 V

Can handle higher voltage inputs, providing a wider operating range.

No. of Functions: 4

Offers versatility and functionality with multiple functions in a single device.

Power Supplies (V): 5

Compatible with standard power supplies, ensuring easy power connection.

No. of Terminals: 16

Provides ample connection points for interfacing with other components.

Maximum Operating Temperature: 85 °C

Can operate efficiently in high-temperature environments, suitable for industrial use.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures, making it ideal for a wide range of environments.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability for reliable connections.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Line Drivers & Receivers DS26C32ATM attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Differential Output:

NO

Input Characteristics:

DIFFERENTIAL SCHMITT TRIGGER

Interface IC Type:

Interface Standard:

EIA-422; EIA-423; FED STD 1020; FED STD 1030

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Low Current:

6 Amp

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Receive Delay:

30 ns

Receiver No. of Bits:

4

Maximum Seated Height:

1.75 mm

Sub-Category:

Line Driver or Receivers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Width:

3.9 mm

Trade Compliance

DS26C32ATM Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-438-3562, 5962014383562

NIIN

014383562

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

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