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CD4086BM96E4

Texas Instruments

CD4086BM96E4 by Texas Instruments

CD4086BM96E4 by Texas Instruments is a CMOS logic gate with 8 inputs and propagation delay of 620 ns at 5V. It operates in temperatures ranging from -55 to 125°C, suitable for military-grade applications. With a small outline package style and surface mount capability, it is ideal for compact electronic designs requiring high-speed signal processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,626 parts In-Stock

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Digiode

USA . 685 parts In-Stock

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Nova Conductors

Japan . 63 parts In-Stock

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AZTECH Wire

Italy . 744 parts In-Stock

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$7.910

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Parana Technologies

USA . 1,717 parts In-Stock

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$8.379

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$778.150

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$7.541

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DigiPath Technology Company

USA . 535 parts In-Stock

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$9.227

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535

$9.227

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ChromeModa Solutions

Germany . 5,477 parts In-Stock

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$9.415

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$7.720

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$9.415

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IDEA Electronic Components Group

UK . 140 parts In-Stock

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$9.415

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$8.944

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$8.474

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140

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Ampacity Inc.

Singapore . 143 parts In-Stock

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$25.000

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One Stop Electronics

USA . 1,514 parts In-Stock

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$64.000

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Corphita

USA . 4,843 parts In-Stock

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Argo Parts USA

USA . 1,887 parts In-Stock

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Continental Prestige Electronics

USA . 476 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Experience top-notch performance and reliability with the CD4086BM96E4 by Texas Instruments, a leading manufacturer in the industry. This logic gate offers unparalleled precision and efficiency, perfect for a wide range of applications. From industrial automation to consumer electronics, this versatile component provides unmatched value and benefits to customers. Trust in Texas Instruments for quality products that deliver exceptional results every time. Elevate your projects with the CD4086BM96E4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand various environmental conditions, making the product reliable for long-term use.

Propagation Delay At Nominal Supply: 620 ns

The low propagation delay ensures fast response times, making the product suitable for applications requiring quick signal processing.

Surface Mount: YES

Being surface mountable makes the product easier to install and saves space on the PCB.

Nominal Supply Voltage / Vsup (V): 5

The standard supply voltage of 5V makes integration with other components straightforward and compatible with common power sources.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates CD4086BM96E4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

1

No. of Inputs:

8

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

620 ns

Propagation Delay (tpd):

620 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD4086BM96E4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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