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CD4075BPWRE4

Texas Instruments

CD4075BPWRE4 by Texas Instruments

CD4075BPWRE4 by Texas Instruments is a Logic Gates IC with 3 functions and inputs. It has a propagation delay of 250 ns at 5V, suitable for military-grade applications. The package is small outline, thin profile, with open-collector output and operates b/w -55 to 125°C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,415 parts In-Stock

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Digiode

USA . 2,453 parts In-Stock

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Native Components

USA . 451 parts In-Stock

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$0.939

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$0.939

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Northwest PG Solutions

USA . 418 parts In-Stock

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$1.033

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AZTECH Wire

Italy . 370 parts In-Stock

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$10.233

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Parana Technologies

USA . 1,199 parts In-Stock

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$16.754

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ChromeModa Solutions

Germany . 1,196 parts In-Stock

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$18.825

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$15.436

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IDEA Electronic Components Group

UK . 112 parts In-Stock

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$18.825

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$17.884

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$16.942

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$16.942

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One Stop Electronics

USA . 1,175 parts In-Stock

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Microchip USA

USA . 4,689 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 2,130 parts In-Stock

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DigiPath Technology Company

USA . 1,620 parts In-Stock

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Corphita

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Overview

Enhance the efficiency and reliability of your electronic projects with the CD4075BPWRE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance in their products. The CD4075BPWRE4 belongs to the Logic Gates category, offering 3 functions and 3 inputs for versatile applications. With a nominal supply voltage of 5V and low propagation delay, this product provides high-speed operation and precise results. Trust Texas Instruments to deliver exceptional value and benefits to help you succeed in your projects. Choose the CD4075BPWRE4 for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable electronic devices.

Propagation Delay At Nominal Supply: 250 ns

Low propagation delay ensures quick response time, making it suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

No. of Functions: 3

Having multiple functions in one component saves space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with most electronic systems.

Load Capacitance (CL): 50 pF

The low load capacitance ensures efficient performance and minimal signal distortion.

Power Supplies (V): 5/15

Compatibility with multiple power supply voltages provides flexibility in system integration.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in a wide range of temperature conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Logic Gates CD4075BPWRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.03 mA

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

CD4075BPWRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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