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CD4075BM96G4

Texas Instruments

CD4075BM96G4 by Texas Instruments

CD4075BM96G4 by Texas Instruments is a Logic Gates IC with 3 functions and inputs. It operates at 5V, has a propagation delay of 250ns, and can handle load capacitance of 50pF. Ideal for applications requiring open-collector output characteristics in military-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,645 parts In-Stock

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Digiode

USA . 1,686 parts In-Stock

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1,686

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Distributors (Availability)

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AZTECH Wire

Italy . 363 parts In-Stock

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$18.059

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363

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One Stop Electronics

USA . 1,295 parts In-Stock

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$20.000

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Parana Technologies

USA . 1,484 parts In-Stock

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$21.760

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$22.219

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DigiPath Technology Company

USA . 2,061 parts In-Stock

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$23.961

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$23.961

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ChromeModa Solutions

Germany . 4,163 parts In-Stock

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$24.450

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$20.049

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$24.450

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IDEA Electronic Components Group

UK . 1,989 parts In-Stock

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$24.450

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$23.228

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$22.005

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Native Components

USA . 871 parts In-Stock

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$170.561

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$163.739

871

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Northwest PG Solutions

USA . 973 parts In-Stock

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$187.618

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QUARKTWIN TECHNOLOGY LTD

USA . 21,162 parts In-Stock

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Microchip USA

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Corphita

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Overview

Enhance your electronic projects with the CD4075BM96G4 from Texas Instruments, a high-quality logic gate that offers reliability and performance like no other. Manufactured by a trusted industry leader, this innovative component is perfect for a wide range of applications in electronics. With its fast propagation delay and open-collector output characteristics, this logic gate ensures smooth operation and seamless integration into your designs. Trust Texas Instruments to deliver top-notch products that guarantee value, efficiency, and exceptional results for all your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY is a durable and lightweight material, making the product sturdy and easy to handle.

Propagation Delay At Nominal Supply: 250 ns

Fast propagation delay helps in quick signal processing, making the product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with most circuit designs.

Output Characteristics: OPEN-COLLECTOR

Open-collector output allows for easy interfacing with other components, enhancing versatility and compatibility.

Temperature Grade: MILITARY

Military-grade temperature range ensures reliability and performance in harsh operating conditions, making it ideal for rugged applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Logic Gates CD4075BM96G4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.03 mA

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.91 mm

Trade Compliance

CD4075BM96G4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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