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BQ28Z610DRZT-R1

Texas Instruments

BQ28Z610DRZT-R1 by Texas Instruments

BQ28Z610DRZT-R1 by Texas Instruments is a Power Management IC with 12 terminals and a supply voltage range of 2.2V to 26V. It has an operating temperature range from -40°C to 85°C, making it suitable for industrial applications. The IC features adjustable threshold and is designed in a small outline package for space-constrained designs.

Median Price

$5.210

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 1,475 parts In-Stock

1+ parts

$3.765

100+ parts

$3.299

1k+ parts

$1.864

10k+ parts

-

1,475

$3.765

$3.299

$1.864

-

Mouser Electronics

USA . 56 parts In-Stock

1+ parts

$5.210

100+ parts

$3.330

1k+ parts

$2.930

10k+ parts

$2.890

56

$5.210

$3.330

$2.930

$2.890

DigiKey

USA . 45 parts In-Stock

1+ parts

$5.210

100+ parts

$3.327

1k+ parts

$3.019

10k+ parts

$2.903

45

$5.210

$3.327

$3.019

$2.903

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,513 parts In-Stock

1+ parts

$3.577

100+ parts

-

1k+ parts

-

10k+ parts

-

3,513

$3.577

-

-

-

Vyrian

USA . 1,921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,921

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 484 parts In-Stock

1+ parts

$2.630

100+ parts

-

1k+ parts

-

10k+ parts

-

484

$2.630

-

-

-

Semicontronic

India . 500 parts In-Stock

1+ parts

$3.200

100+ parts

$3.120

1k+ parts

$3.104

10k+ parts

-

500

$3.200

$3.120

$3.104

-

Corphita

USA . 3,630 parts In-Stock

1+ parts

$3.388

100+ parts

-

1k+ parts

-

10k+ parts

-

3,630

$3.388

-

-

-

Parana Technologies

USA . 633 parts In-Stock

1+ parts

$13.928

100+ parts

-

1k+ parts

$14.407

10k+ parts

-

633

$13.928

-

$14.407

-

DigiPath Technology Company

USA . 1,723 parts In-Stock

1+ parts

$15.336

100+ parts

-

1k+ parts

-

10k+ parts

-

1,723

$15.336

-

-

-

ChromeModa Solutions

Germany . 6,720 parts In-Stock

1+ parts

$15.649

100+ parts

$12.832

1k+ parts

-

10k+ parts

-

6,720

$15.649

$12.832

-

-

IDEA Electronic Components Group

UK . 88 parts In-Stock

1+ parts

$15.649

100+ parts

$14.867

1k+ parts

$14.084

10k+ parts

-

88

$15.649

$14.867

$14.084

-

Native Components

USA . 466 parts In-Stock

1+ parts

$32.075

100+ parts

-

1k+ parts

-

10k+ parts

$30.792

466

$32.075

-

-

$30.792

Northwest PG Solutions

USA . 1,044 parts In-Stock

1+ parts

$35.283

100+ parts

-

1k+ parts

-

10k+ parts

-

1,044

$35.283

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 24,816 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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24,816

-

-

-

-

Overview

Elevate your power management solutions with the BQ28Z610DRZT-R1 by Texas Instruments. This top-quality Power Management IC is designed to deliver superior performance and reliability, making it a trusted choice for a wide range of applications. With its advanced features and innovative design, this product offers unmatched value and benefits to customers seeking optimal power efficiency and control. Trust Texas Instruments to provide cutting-edge technology that meets your power management needs effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides good durability and resistance to environmental elements, ensuring the longevity of the product.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, especially in compact electronic designs.

Nominal Supply Voltage (Vsup): 7.2 V

The optimal supply voltage of 7.2 V ensures efficient power management and performance of the IC.

No. of Terminals: 12

Having 12 terminals allows for multiple connections and functionality, making the IC versatile in various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures stable operation even in harsh environmental conditions.

Maximum Seated Height: 1 mm

The low profile design with a maximum seated height of 1 mm enables compact and space-saving PCB layouts.

Minimum Supply Voltage (Vsup): 2.2 V

The minimum supply voltage of 2.2 V allows for a wide range of input voltage compatibility, enhancing flexibility in power supply options.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures reliable performance in industrial applications where temperature fluctuations may occur.

Moisture Sensitivity Level (MSL): 2

With a moisture sensitivity level of 2, the IC is less prone to moisture-related issues during storage and handling.

Maximum Supply Voltage (Vsup): 26 V

The high maximum supply voltage of 26 V allows for compatibility with a wide range of power sources, increasing the versatility of the IC.

Adjustable Threshold: YES

The ability to adjust the threshold voltage allows for customization and fine-tuning of the power management settings according to specific requirements.

Technical Specifications

Power Management ICs BQ28Z610DRZT-R1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-N12

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC12,.1,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage (Vsup):

7.2 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2.5 mm

Trade Compliance

BQ28Z610DRZT-R1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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