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BQ24314DSJT

Texas Instruments

BQ24314DSJT by Texas Instruments

BQ24314DSJT by Texas Instruments is a Power Management IC with 12 terminals, operating b/w -40 to 85°C. It supports supply voltages from 3.3V to 26V and has an adjustable threshold of +5.85V, making it ideal for industrial applications requiring precise power supply support circuits in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,646 parts In-Stock

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8,646

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Digiode

USA . 1,515 parts In-Stock

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1,515

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Distributors (Availability)

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Semicontronic

India . 891 parts In-Stock

1+ parts

$3.500

100+ parts

$3.412

1k+ parts

$3.395

10k+ parts

-

891

$3.500

$3.412

$3.395

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One Stop Electronics

USA . 1,016 parts In-Stock

1+ parts

$6.500

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1,016

$6.500

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AZTECH Wire

Italy . 189 parts In-Stock

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$7.146

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189

$7.146

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Ampacity Inc.

Singapore . 906 parts In-Stock

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$7.500

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906

$7.500

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Parana Technologies

USA . 2,359 parts In-Stock

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$8.487

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$9.141

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2,359

$8.487

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$9.141

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DigiPath Technology Company

USA . 997 parts In-Stock

1+ parts

$9.345

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997

$9.345

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IDEA Electronic Components Group

UK . 1,141 parts In-Stock

1+ parts

$9.536

100+ parts

$9.059

1k+ parts

$8.582

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1,141

$9.536

$9.059

$8.582

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ChromeModa Solutions

Germany . 739 parts In-Stock

1+ parts

$9.536

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$7.820

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739

$9.536

$7.820

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Corphita

USA . 4,857 parts In-Stock

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4,857

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Northwest PG Solutions

USA . 416 parts In-Stock

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416

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Native Components

USA . 392 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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Microchip USA

USA . 287 parts In-Stock

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287

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Overview

Unlock the power of efficient and reliable power management with the BQ24314DSJT by Texas Instruments. This cutting-edge Power Management IC offers exceptional quality and performance, thanks to its innovative design and top-notch manufacturing standards. Ideal for a wide range of applications, this product is a game-changer in the industry. Experience seamless operation, enhanced functionality, and peace of mind knowing that you have a trustworthy solution at your fingertips. Upgrade your systems with the BQ24314DSJT and enjoy the benefits of superior technology at your disposal.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material make the package durable and resistant to external elements, ensuring a longer lifespan for the product.

Nominal Supply Voltage (Vsup): 5 V

Stable supply voltage of 5V ensures consistent performance and reliability.

Power Supplies (V): 3/24

Support for multiple power supplies (3V and 24V) allows for flexibility in power input options.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C allows the product to function in a wide range of environments without overheating.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40°C ensures the product can operate in cold conditions without any issues.

Width (mm): 3 mm

Small width of 3mm allows for compact and space-saving designs when integrating this IC into systems.

Maximum Supply Voltage (Vsup): 26 V

High maximum supply voltage of 26V provides flexibility in power input options for different applications.

Adjustable Threshold: YES

Ability to adjust the threshold voltage allows for customization and fine-tuning of the IC's performance to meet specific requirements.

Technical Specifications

Power Management ICs BQ24314DSJT attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 5.85V

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-N12

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC12,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/24

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.6 mA

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

3.3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+5.85V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

BQ24314DSJT Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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