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BQ24230RGTRG4

Texas Instruments

BQ24230RGTRG4 by Texas Instruments

BQ24230RGTRG4 by Texas Instruments is a Power Management IC with 16 terminals, operating b/w -40 to 85°C. It has a supply voltage range of 4.35V to 26V and supports a nominal threshold voltage of +3.3V. This chip carrier is suitable for industrial applications requiring power supply support circuits in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 27,510 parts In-Stock

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Vyrian

USA . 6,352 parts In-Stock

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Digiode

USA . 2,781 parts In-Stock

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2,781

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VNN

France . 665 parts In-Stock

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665

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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One Stop Electronics

USA . 1,223 parts In-Stock

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$1.500

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$1.500

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Ampacity Inc.

Singapore . 709 parts In-Stock

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$1.500

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709

$1.500

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AZTECH Wire

Italy . 676 parts In-Stock

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$12.107

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676

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Parana Technologies

USA . 238 parts In-Stock

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$19.328

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$19.349

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238

$19.328

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$19.349

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DigiPath Technology Company

USA . 1,061 parts In-Stock

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$21.283

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$19.580

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$21.283

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ChromeModa Solutions

Germany . 1,412 parts In-Stock

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$21.717

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$17.808

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$21.717

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IDEA Electronic Components Group

UK . 117 parts In-Stock

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$21.717

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$20.631

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$19.545

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117

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Aranea Global

USA . 2,000 parts In-Stock

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Microchip USA

USA . 1,760 parts In-Stock

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Corphita

USA . 1,212 parts In-Stock

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Overview

Elevate your power management game with the BQ24230RGTRG4 by Texas Instruments! This cutting-edge Power Management IC offers unmatched quality and reliability, thanks to its renowned manufacturer. With a wide range of applications in various industries, this chip carrier, heat sink/slug package style device is a game-changer for any project. Experience the benefits of seamless power supply support, minimal operating temperatures, and adjustable thresholds that cater to your specific needs. Upgrade to the BQ24230RGTRG4 today and elevate your power management solutions to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the IC, ensuring durability and reliability.

Nominal Supply Voltage (Vsup): 5 V

A common and stable supply voltage of 5V makes this IC compatible with a wide range of applications and power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand demanding environmental conditions and prolonged use without overheating.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of these high-quality finishes ensures good conductivity and corrosion resistance, extending the lifespan of the IC.

Width (mm): 3 mm

Being compact in size with a width of 3mm, this IC is suitable for applications where space is limited, allowing for more flexible design options.

Temperature Grade: INDUSTRIAL

Designed for industrial use, this IC is built to withstand harsh industrial environments, making it a reliable choice for industrial applications.

Adjustable Threshold: YES

The ability to adjust the threshold voltage allows for customization and fine-tuning of the IC's operation to meet specific application requirements.

Technical Specifications

Power Management ICs BQ24230RGTRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

1.5 mA

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

4.35 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Nominal Threshold Voltage (V):

+3.3V

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3 mm

Trade Compliance

BQ24230RGTRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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