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BQ24113ARHLTG4

Texas Instruments

BQ24113ARHLTG4 by Texas Instruments

BQ24113ARHLTG4 by Texas Instruments is a Power Management IC with VOLTAGE-MODE control mode, BUCK switcher config, and 1100 kHz max switching frequency. Ideal for industrial applications requiring a 4.5 A max output current at 4.2 V nominal voltage within -40 to 85 °C operating temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,914 parts In-Stock

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Digiode

USA . 4,977 parts In-Stock

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QIE Inc.

USA . 986 parts In-Stock

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986

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One Stop Electronics

USA . 769 parts In-Stock

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$3.500

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AZTECH Wire

Italy . 855 parts In-Stock

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$9.267

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Parana Technologies

USA . 997 parts In-Stock

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$14.430

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$14.871

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997

$14.430

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DigiPath Technology Company

USA . 882 parts In-Stock

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$15.889

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$14.618

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882

$15.889

$14.618

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ChromeModa Solutions

Germany . 1,244 parts In-Stock

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$16.213

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$13.295

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IDEA Electronic Components Group

UK . 487 parts In-Stock

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$16.213

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$15.402

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$14.592

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Microchip USA

USA . 2,157 parts In-Stock

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Native Components

USA . 879 parts In-Stock

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Northwest PG Solutions

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Corphita

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Overview

Experience the power of innovation with the BQ24113ARHLTG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Power Management ICs that set the standard for excellence. Ideal for a wide range of applications, this chip carrier offers superior performance and reliability. With a focus on efficiency and precision, the BQ24113ARHLTG4 provides customers with unmatched value and benefits. Trust Texas Instruments to deliver cutting-edge solutions that meet all your power supply circuit needs. Elevate your projects with the BQ24113ARHLTG4 and experience the difference that industry-leading technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the IC, making it suitable for various industrial applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and resources during production.

No. of Terminals: 20

Having 20 terminals provides the flexibility to connect to multiple components and peripherals, enhancing the functionality of the power management IC.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability and performance in demanding environments without the risk of overheating.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the IC to function effectively even in extreme cold conditions, expanding its usability.

Maximum Output Current: 4.5 A

With a high maximum output current, this power management IC can efficiently handle power requirements for a variety of applications.

Control Technique: PULSE WIDTH MODULATION

Pulse width modulation control technique offers precise regulation of power output, resulting in stable and efficient performance.

Technical Specifications

Power Management ICs BQ24113ARHLTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

16 V

Minimum Input Voltage:

4.35 V

JESD-30 Code:

R-PQCC-N20

JESD-609 Code:

e4

Length:

4.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

4.5 A

Nominal Output Voltage:

4.2 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Current (Isup):

5 mA

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

4.35 V

Surface Mount:

YES

Switcher Config:

BUCK

Maximum Switching Frequency:

1100 kHz

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3.5 mm

Trade Compliance

BQ24113ARHLTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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