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BQ20Z90DBT-V110G4

Texas Instruments

BQ20Z90DBT-V110G4 by Texas Instruments

BQ20Z90DBT-V110G4 by Texas Instruments is a Power Management IC with 30 terminals, operating b/w -40 to 125 °C. It has a supply voltage range of 2.4V to 2.6V and supports automotive applications with adjustable threshold feature for power supply circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,815 parts In-Stock

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Vyrian

USA . 2,956 parts In-Stock

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2,956

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One Stop Electronics

USA . 1,000 parts In-Stock

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$0.500

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$0.500

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Parana Technologies

USA . 598 parts In-Stock

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$1.193

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$1.993

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598

$1.193

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$1.993

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ChromeModa Solutions

Germany . 3,567 parts In-Stock

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$1.340

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$1.099

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IDEA Electronic Components Group

UK . 1,962 parts In-Stock

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$1.340

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$1.206

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Ampacity Inc.

Singapore . 1,524 parts In-Stock

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$2.500

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$2.500

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Semicontronic

India . 1,609 parts In-Stock

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$3.500

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$3.412

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$3.395

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$3.500

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AZTECH Wire

Italy . 549 parts In-Stock

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$12.291

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Component Stockers USA

USA . 718 parts In-Stock

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$99.990

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Lixinc

USA . 3,966 parts In-Stock

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Microchip USA

USA . 1,474 parts In-Stock

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Northwest PG Solutions

USA . 944 parts In-Stock

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DigiPath Technology Company

USA . 614 parts In-Stock

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Native Components

USA . 575 parts In-Stock

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Corphita

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Corohmni

South Africa . 69 parts In-Stock

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Overview

Experience the power of innovation with the BQ20Z90DBT-V110G4 by Texas Instruments. This Power Management IC offers unparalleled quality and reliability, backed by a trusted manufacturer. Ideal for automotive applications, this IC ensures optimal performance and efficiency. With adjustable thresholds and a wide operating temperature range, this product provides unmatched value and benefits to customers seeking cutting-edge solutions for their power management needs. Trust Texas Instruments for superior technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the product durable and resistant to impact, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable makes installation easier and saves space on the PCB, making it suitable for compact designs.

Nominal Supply Voltage (Vsup): 2.5 V

The specified supply voltage ensures compatibility with a wide range of applications requiring a stable power source.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the product to function reliably even in harsh environments or during extended use.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates that the product is suitable for use in automotive applications where temperature fluctuations are common.

Technical Specifications

Power Management ICs BQ20Z90DBT-V110G4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G30

JESD-609 Code:

e4

Length:

7.8 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

30

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP30,.25,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

2.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

BQ20Z90DBT-V110G4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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