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BQ2014SN-D120G4

Texas Instruments

BQ2014SN-D120G4 by Texas Instruments

BQ2014SN-D120G4 by Texas Instruments is a Power Management IC with 16 terminals and a supply voltage range of 3-6.5V. It features a small outline package, nickel palladium gold finish, and operates in temperatures from 0 to 70°C. Ideal for power supply support circuits in commercial-grade applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 8,096 parts In-Stock

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Chip Stock

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Euro-Tech

UK . 1,511 parts In-Stock

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Digiode

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One Stop Electronics

USA . 1,351 parts In-Stock

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$5.500

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AZTECH Wire

Italy . 827 parts In-Stock

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Parana Technologies

USA . 1,615 parts In-Stock

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$6.344

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DigiPath Technology Company

USA . 1,287 parts In-Stock

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$6.985

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$6.427

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ChromeModa Solutions

Germany . 6,467 parts In-Stock

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$5.845

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IDEA Electronic Components Group

UK . 2,209 parts In-Stock

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$6.415

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A-Z Elektronik GmbH

Germany . 6,626 parts In-Stock

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Alle Elektronik GmbH

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Microchip USA

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Kepictronics

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Northwest PG Solutions

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Corphita

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Native Components

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Overview

Experience the unrivaled quality and reliability of Texas Instruments with the BQ2014SN-D120G4 Power Management IC. This small outline package offers exceptional performance and efficiency, making it ideal for a wide range of applications. With a nominal supply voltage of 4.25V, this IC provides power supplies ranging from 3V to 6.5V, ensuring versatility and flexibility. Trust in Texas Instruments for cutting-edge technology and superior design that meets your needs. Upgrade your power management solutions today with the BQ2014SN-D120G4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for the package, ensuring long-term performance.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage (Vsup): 4.25 V

Optimal nominal supply voltage ensures stable and efficient power management.

No. of Terminals: 16

Having 16 terminals allows for multiple connections and a wide range of applications.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliable performance even under extreme conditions.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for operation in a variety of environments.

Technical Specifications

Power Management ICs BQ2014SN-D120G4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/6.5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.25 mA

Maximum Supply Voltage (Vsup):

6.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

4.25 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

BQ2014SN-D120G4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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