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BQ2013HSN-A514G4

Texas Instruments

BQ2013HSN-A514G4 by Texas Instruments

BQ2013HSN-A514G4 by Texas Instruments is a Power Management IC with 16 terminals, operating voltage range of 3-6.5V, and temp range of 0-70°C. It is a small outline package suitable for power supply support circuits in commercial-grade applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,403 parts In-Stock

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Digiode

USA . 4,069 parts In-Stock

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PC Components Company LLC

USA . 43 parts In-Stock

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Bristol Electronics

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Ampacity Inc.

Singapore . 376 parts In-Stock

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$1.500

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One Stop Electronics

USA . 990 parts In-Stock

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$6.500

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AZTECH Wire

Italy . 273 parts In-Stock

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$14.402

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Parana Technologies

USA . 1,158 parts In-Stock

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$16.806

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$17.052

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DigiPath Technology Company

USA . 878 parts In-Stock

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$18.505

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$17.025

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ChromeModa Solutions

Germany . 6,792 parts In-Stock

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$18.883

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$15.484

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IDEA Electronic Components Group

UK . 199 parts In-Stock

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$18.883

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$17.939

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$16.995

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199

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Microchip USA

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Corphita

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Native Components

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Northwest PG Solutions

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Perfect Parts

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the BQ2013HSN-A514G4 Power Management IC. This versatile component is a game-changer in the industry, offering a wide range of applications in power supply support circuits. With a small outline package and dual terminal position, this IC is designed for easy integration and efficiency. Trust in Texas Instruments to deliver superior products that provide maximum value and benefits to customers, setting new standards in power management technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the product lightweight and durable.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of the product onto circuit boards.

Nominal Supply Voltage (Vsup): 4.25 V

The 4.25 V supply voltage is suitable for a wide range of applications, providing stable power output.

No. of Terminals: 16

The 16 terminals provide ample connectivity options for various external components or circuitry.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures the product can withstand demanding environmental conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0°C ensures the product can operate in a wide range of temperatures.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish on the terminals provides excellent conductivity and corrosion resistance.

Width (mm): 3.9 mm

The compact width of 3.9 mm saves space on the circuit board and allows for efficient PCB layout.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Being a power supply support circuit, this product helps in regulating and stabilizing power inputs for other components.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connection points for external components.

Technical Specifications

Power Management ICs BQ2013HSN-A514G4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

6.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

4.25 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

BQ2013HSN-A514G4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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