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BFW29

Texas Instruments

BFW29 by Texas Instruments

BFW29 by Texas Instruments is an NPN transistor with a max power dissipation of 0.6W and a min DC current gain of 70. With a max collector current of 0.4A, it operates at temperatures up to 175°C. Ideal for applications requiring high frequency operation such as amplifiers and oscillators due to its nominal transition frequency of 80MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,256 parts In-Stock

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8,256

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Digiode

USA . 144 parts In-Stock

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144

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,130 parts In-Stock

1+ parts

$0.963

100+ parts

-

1k+ parts

$1.862

10k+ parts

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1,130

$0.963

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$1.862

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Semicontronic

India . 1,351 parts In-Stock

1+ parts

$1.050

100+ parts

$1.024

1k+ parts

$1.018

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1,351

$1.050

$1.024

$1.018

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ChromeModa Solutions

Germany . 5,370 parts In-Stock

1+ parts

$1.082

100+ parts

$0.887

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-

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5,370

$1.082

$0.887

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IDEA Electronic Components Group

UK . 1,902 parts In-Stock

1+ parts

$1.082

100+ parts

-

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$0.974

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1,902

$1.082

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$0.974

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AZTECH Wire

Italy . 471 parts In-Stock

1+ parts

$17.549

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471

$17.549

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One Stop Electronics

USA . 1,292 parts In-Stock

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$50.050

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1,292

$50.050

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Ampacity Inc.

Singapore . 991 parts In-Stock

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$54.050

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991

$54.050

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Corphita

USA . 2,679 parts In-Stock

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2,679

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Northwest PG Solutions

USA . 1,930 parts In-Stock

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$4.715

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1,930

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$4.715

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DigiPath Technology Company

USA . 1,258 parts In-Stock

1+ parts

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100+ parts

$0.976

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1,258

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$0.976

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Native Components

USA . 919 parts In-Stock

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$4.667

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919

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$4.667

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Corohmni

South Africa . 484 parts In-Stock

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484

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Overview

Experience superior performance and reliability with the BFW29 by Texas Instruments. As a leading manufacturer, Texas Instruments ensures top-notch quality in their products. The BFW29 falls under the category of Other Function Transistors, offering versatility in various applications. Customers can expect excellent value and benefits from this NPN transistor, with a maximum power dissipation of 0.6W and a nominal transition frequency of 80MHz. Trust Texas Instruments for exceptional products that deliver unparalleled advantages to meet your needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration transistors are easy to use and require simple circuit design, making this product suitable for beginners or basic electronics projects.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, this product can handle moderate power levels efficiently without risking overheating or damage.

Minimum DC Current Gain (hFE): 70

A minimum DC current gain of 70 ensures stable and predictable amplification capabilities, allowing for accurate signal processing in circuits.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this product can withstand high temperatures, making it suitable for industrial or automotive applications.

Maximum Collector Current (IC): 0.4 A

The maximum collector current of 0.4A allows this product to handle moderate current levels, making it ideal for applications requiring reliable current switching or amplification.

Nominal Transition Frequency (fT): 80 MHz

A high nominal transition frequency of 80MHz indicates fast switching speeds, making this product suitable for high-frequency signal processing or switching applications.

Technical Specifications

Other Function Transistors BFW29 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

70

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BFW29 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-232-9441, 5961142329441

NIIN

142329441

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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