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BFR79TO5

Texas Instruments

BFR79TO5 by Texas Instruments

BFR79TO5 by Texas Instruments is a PNP transistor with a max power dissipation of 0.8W and a min DC current gain of 25. It operates at temperatures up to 150°C, with a max collector current of 1A and nominal transition frequency of 150MHz. Ideal for applications requiring high-frequency signal amplification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,758 parts In-Stock

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2,758

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Digiode

USA . 1,307 parts In-Stock

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1,307

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Distributors (Availability)

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Parana Technologies

USA . 1,203 parts In-Stock

1+ parts

$1.727

100+ parts

-

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$2.311

10k+ parts

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1,203

$1.727

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$2.311

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DigiPath Technology Company

USA . 1,961 parts In-Stock

1+ parts

$1.901

100+ parts

$1.749

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1,961

$1.901

$1.749

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ChromeModa Solutions

Germany . 3,118 parts In-Stock

1+ parts

$1.940

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$1.591

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3,118

$1.940

$1.591

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IDEA Electronic Components Group

UK . 282 parts In-Stock

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$1.940

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$1.746

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282

$1.940

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$1.746

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AZTECH Wire

Italy . 437 parts In-Stock

1+ parts

$5.881

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437

$5.881

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One Stop Electronics

USA . 233 parts In-Stock

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$29.050

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233

$29.050

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Ampacity Inc.

Singapore . 1,592 parts In-Stock

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$40.050

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$40.050

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Semicontronic

India . 1,348 parts In-Stock

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$52.050

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$50.749

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$50.488

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1,348

$52.050

$50.749

$50.488

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Corphita

USA . 2,915 parts In-Stock

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2,915

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Northwest PG Solutions

USA . 1,240 parts In-Stock

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Native Components

USA . 918 parts In-Stock

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Corohmni

South Africa . 272 parts In-Stock

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Overview

Experience top-notch performance with the BFR79TO5 by Texas Instruments, a leading manufacturer known for delivering superior quality components. This PNP transistor boasts a single configuration and can handle up to 1A of collector current. With a nominal transition frequency of 150 MHz, this transistor is ideal for a wide range of applications. Trust in Texas Instruments to provide reliable products that offer exceptional value and benefits, ensuring your projects run smoothly and efficiently.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making it more cost-effective and space-efficient.

Maximum Power Dissipation (Abs): 0.8 W

The high maximum power dissipation allows the transistor to handle moderate power levels without overheating, ensuring reliability and longevity.

Minimum DC Current Gain (hFE): 25

With a minimum DC current gain of 25, this transistor provides sufficient amplification for most applications, improving signal integrity.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to operate in harsh environments without performance degradation, enhancing durability.

Maximum Collector Current (IC): 1 A

The high maximum collector current rating of 1A enables the transistor to handle higher current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 150 MHz

The high transition frequency of 150 MHz indicates the speed at which the transistor can switch between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Other Function Transistors BFR79TO5 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BFR79TO5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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