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BFR79

Texas Instruments

BFR79 by Texas Instruments

BFR79 by Texas Instruments is a PNP transistor with max power dissipation of 0.8W, hFE of 20, and fT of 150MHz. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its high collector current capability and operating temperature up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,813 parts In-Stock

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Vyrian

USA . 3,379 parts In-Stock

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3,379

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Ashlea Components Ltd

UK . 119 parts In-Stock

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Holdelec - ElecDif-Pro

France . 55 parts In-Stock

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LittleDiode

UK . 6 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 813 parts In-Stock

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$0.141

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$0.135

813

$0.141

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$0.135

Northwest PG Solutions

USA . 751 parts In-Stock

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$0.155

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$0.137

751

$0.155

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$0.137

Parana Technologies

USA . 2,120 parts In-Stock

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$1.727

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$2.311

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2,120

$1.727

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$2.311

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DigiPath Technology Company

USA . 1,136 parts In-Stock

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$1.901

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$1.749

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$1.901

$1.749

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ChromeModa Solutions

Germany . 809 parts In-Stock

1+ parts

$1.940

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$1.591

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809

$1.940

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IDEA Electronic Components Group

UK . 673 parts In-Stock

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$1.940

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$1.746

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673

$1.940

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$1.746

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AZTECH Wire

Italy . 195 parts In-Stock

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$10.400

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One Stop Electronics

USA . 1,523 parts In-Stock

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$29.050

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Corphita

USA . 754 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 154 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality BFR79 PNP transistor from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures reliability and performance in every product they create. The BFR79 is ideal for a wide range of applications, offering customers exceptional value and versatility. Experience the benefits of this single configuration transistor, from its maximum power dissipation to its nominal transition frequency. Trust Texas Instruments to provide you with the tools you need for success in your projects.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors have higher mobility and faster switching speed compared to NPN transistors, making them suitable for high-speed applications.

Configuration: SINGLE

A single configuration transistor simplifies circuit design and reduces component count, making it cost-effective and easy to implement.

Maximum Power Dissipation (Abs): 0.8 W

With a high power dissipation rating, this transistor can handle higher power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures consistent and stable amplification of input signals, making this transistor suitable for amplifier applications.

Maximum Operating Temperature: 150 °C

The high operating temperature rating of 150°C allows this transistor to be used in a variety of environments without the risk of thermal damage.

Maximum Collector Current (IC): 1 A

With a high collector current rating, this transistor can handle high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 150 MHz

The high transition frequency of 150 MHz allows this transistor to operate at high frequencies, making it ideal for RF and high-speed switching applications.

Technical Specifications

Other Function Transistors BFR79 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BFR79 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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