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BD243A

Texas Instruments

BD243A by Texas Instruments

BD243A by Texas Instruments is an NPN transistor with a max power dissipation of 65W, hFE of 30, and IC of 8A. It is used in applications requiring high current amplification and switching capabilities at temperatures up to 150°C.

Median Price

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Lifecycle Status

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Digiode

USA . 8,548 parts In-Stock

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Holdelec - ElecDif-Pro

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PUI

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LittleDiode

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.393

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$0.358

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$0.322

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$0.393

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ChromeModa Solutions

Germany . 5,879 parts In-Stock

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$1.257

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$1.031

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IDEA Electronic Components Group

UK . 1,494 parts In-Stock

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DigiPath Technology Company

USA . 2,836 parts In-Stock

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MKK Technologies

India . 2,257 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 874 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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Metaverse IC Inc.

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Parana Technologies

USA . 1,740 parts In-Stock

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UHIMA Technologies

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Overview

Unveil the power of Texas Instruments with the BD243A transistor! This high-quality NPN transistor offers a range of applications in various electronic devices, providing reliable performance and efficiency. With a maximum power dissipation of 65W and a maximum collector current of 8A, this transistor ensures superior functionality and durability. Trust Texas Instruments for cutting-edge technology and unleash the full potential of your electronics with the BD243A transistor. Elevate your projects with precision and quality like never before.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration transistors are simpler to use and require less complex circuit designs, making this product convenient for basic projects.

Maximum Power Dissipation (Abs): 65 W

With a high maximum power dissipation, this product can handle larger loads without overheating, making it reliable for high-power applications.

Minimum DC Current Gain (hFE): 30

A higher DC current gain indicates better amplification capabilities, making this product suitable for amplifying weak signals effectively.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand heat better, ensuring stable performance even in demanding conditions.

Maximum Collector Current (IC): 8 A

The high maximum collector current allows this product to handle higher current loads, making it suitable for applications that require power switching.

Technical Specifications

Other Function Transistors BD243A attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

8 A

Configuration:

Minimum DC Current Gain (hFE):

30

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

BD243A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-193-8767, 5961121938767, 5961-33-126-6480, 5961331266480, 5961-99-755-5368, 5961997555368

NIIN

121938767, 331266480, 997555368

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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