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BD242A

Texas Instruments

BD242A by Texas Instruments

The Texas Instruments BD242A is a PNP transistor with max power dissipation of 40W, max collector current of 5A, and min DC current gain of 25. It operates up to 150°C and has a transition frequency of 3MHz. Ideal for high-power applications in electronic circuits.

Median Price

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Lifecycle Status

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Digiode

USA . 8,492 parts In-Stock

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Vyrian

USA . 8,123 parts In-Stock

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Anansix

USA . 1,896 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,726 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,726 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 758 parts In-Stock

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ECAB

Sweden . 696 parts In-Stock

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GES GmbH

Germany . 84 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 9 parts In-Stock

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Huijzer Components

Netherlands . 8 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Northwest PG Solutions

USA . 3,444 parts In-Stock

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$0.106

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$0.094

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.797

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$0.725

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$0.654

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ChromeModa Solutions

Germany . 1,180 parts In-Stock

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$1.036

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$0.850

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IDEA Electronic Components Group

UK . 3,132 parts In-Stock

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$1.695

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$1.525

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DigiPath Technology Company

USA . 2,027 parts In-Stock

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$3.187

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MKK Technologies

India . 475 parts In-Stock

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AZTECH Wire

Italy . 194 parts In-Stock

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$5.080

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One Stop Electronics

USA . 637 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 5,352 parts In-Stock

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Corphita

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Supply Digital

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Assy Fe

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Native Components

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Kulean Microsystems

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Parana Technologies

USA . 1,489 parts In-Stock

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Problanco Electronics

Mexico . 714 parts In-Stock

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UHIMA Technologies

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Corohmni

South Africa . 491 parts In-Stock

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Perfect Parts

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Overview

Unlock the potential of your electronic projects with the BD242A by Texas Instruments. Known for its superior quality and reliability, Texas Instruments delivers top-notch performance in the field of Other Function Transistors. The BD242A, a PNP transistor with a maximum power dissipation of 40W, offers customers unmatched value and benefits. Whether you're working on audio amplifiers, voltage regulators, or motor control applications, this transistor provides the efficiency and precision you need to bring your projects to life. Elevate your designs with the BD242A today.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often used in low-side switching applications and are known for their high current capability.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to use in various applications.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, making it reliable in demanding conditions.

Minimum DC Current Gain (hFE): 25

A higher DC current gain ensures that the transistor can provide sufficient amplification, making it suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in environments where temperature fluctuations are common, ensuring stability and performance.

Maximum Collector Current (IC): 5 A

The high maximum collector current rating enables this transistor to handle large current loads, making it ideal for power switching applications.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency allows this transistor to operate at high frequencies, making it suitable for RF and switching applications that require fast response times.

Technical Specifications

Other Function Transistors BD242A attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BD242A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5120-01-430-0818, 5120014300818, 5961-15-132-7708, 5961151327708, 5961-12-318-3836, 5961123183836

NIIN

014300818, 151327708, 123183836

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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