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BD241F

Texas Instruments

BD241F by Texas Instruments

BD241F by Texas Instruments is an NPN transistor with a max power dissipation of 2W and max collector current of 3A. With a min DC current gain of 10, it operates up to 140°C, making it ideal for high-power applications like amplifiers and power supplies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,930 parts In-Stock

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5,930

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Digiode

USA . 2,353 parts In-Stock

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2,353

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Parana Technologies

USA . 1,356 parts In-Stock

1+ parts

$0.594

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-

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$1.676

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1,356

$0.594

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$1.676

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DigiPath Technology Company

USA . 2,022 parts In-Stock

1+ parts

$0.654

100+ parts

$0.601

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2,022

$0.654

$0.601

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ChromeModa Solutions

Germany . 3,009 parts In-Stock

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$0.667

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$0.547

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3,009

$0.667

$0.547

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IDEA Electronic Components Group

UK . 500 parts In-Stock

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$0.667

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$0.600

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500

$0.667

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$0.600

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Semicontronic

India . 1,237 parts In-Stock

1+ parts

$9.050

100+ parts

$8.824

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$8.778

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1,237

$9.050

$8.824

$8.778

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AZTECH Wire

Italy . 791 parts In-Stock

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$14.891

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791

$14.891

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One Stop Electronics

USA . 437 parts In-Stock

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$31.050

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437

$31.050

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Ampacity Inc.

Singapore . 684 parts In-Stock

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$35.050

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684

$35.050

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Northwest PG Solutions

USA . 1,048 parts In-Stock

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Native Components

USA . 864 parts In-Stock

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Corphita

USA . 598 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Overview

Unlock the power of innovation with the Texas Instruments BD241F transistor. Manufactured by a trusted industry leader, this NPN transistor offers exceptional quality and reliability for a wide range of applications. With a maximum power dissipation of 2W and a maximum collector current of 3A, this transistor provides superior performance in a compact package. Whether you're designing electronics for automotive, industrial, or consumer applications, the BD241F delivers unmatched value and efficiency.Upgrade your designs with the Texas Instruments BD241F transistor today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing good performance and low noise characteristics.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them suitable for various applications.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle moderate power levels without getting damaged, ensuring reliable operation.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 indicates good amplification capability, allowing the transistor to efficiently amplify signals in the circuit.

Maximum Operating Temperature: 140 °C

With a maximum operating temperature of 140°C, this transistor can withstand high temperature environments, increasing its versatility.

Maximum Collector Current (IC): 3 A

The high maximum collector current of 3A allows the transistor to handle heavy loads, making it suitable for power amplification applications.

Nominal Transition Frequency (fT): 3 MHz

A nominal transition frequency of 3MHz indicates good high-frequency performance, making this transistor suitable for use in RF and switching circuits.

Technical Specifications

Other Function Transistors BD241F attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BD241F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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