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BD241E

Texas Instruments

BD241E by Texas Instruments

BD241E by Texas Instruments is an NPN transistor with a max power dissipation of 2W and max collector current of 3A. With a min DC current gain of 10, it operates up to 140°C and has a transition frequency of 3MHz. Ideal for applications requiring high power amplification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,250 parts In-Stock

1+ parts

-

100+ parts

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5,250

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Digiode

USA . 3,085 parts In-Stock

1+ parts

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3,085

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 84 parts In-Stock

1+ parts

$0.202

100+ parts

-

1k+ parts

-

10k+ parts

$0.194

84

$0.202

-

-

$0.194

Northwest PG Solutions

USA . 1,950 parts In-Stock

1+ parts

$0.222

100+ parts

-

1k+ parts

-

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$0.196

1,950

$0.222

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-

$0.196

Parana Technologies

USA . 945 parts In-Stock

1+ parts

$0.697

100+ parts

-

1k+ parts

$1.733

10k+ parts

-

945

$0.697

-

$1.733

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DigiPath Technology Company

USA . 1,381 parts In-Stock

1+ parts

$0.767

100+ parts

$0.706

1k+ parts

-

10k+ parts

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1,381

$0.767

$0.706

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-

ChromeModa Solutions

Germany . 5,400 parts In-Stock

1+ parts

$0.783

100+ parts

$0.642

1k+ parts

-

10k+ parts

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5,400

$0.783

$0.642

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IDEA Electronic Components Group

UK . 1,211 parts In-Stock

1+ parts

$0.783

100+ parts

-

1k+ parts

$0.705

10k+ parts

-

1,211

$0.783

-

$0.705

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Semicontronic

India . 483 parts In-Stock

1+ parts

$5.050

100+ parts

$4.924

1k+ parts

$4.898

10k+ parts

-

483

$5.050

$4.924

$4.898

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AZTECH Wire

Italy . 354 parts In-Stock

1+ parts

$10.086

100+ parts

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354

$10.086

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Ampacity Inc.

Singapore . 485 parts In-Stock

1+ parts

$25.050

100+ parts

-

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485

$25.050

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One Stop Electronics

USA . 665 parts In-Stock

1+ parts

$59.050

100+ parts

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665

$59.050

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Corphita

USA . 2,668 parts In-Stock

1+ parts

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2,668

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Corohmni

South Africa . 330 parts In-Stock

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330

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Overview

Experience high-quality performance with the BD241E by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products like the BD241E, which falls under the category of Other Function Transistors. This NPN transistor offers a range of applications and benefits to customers, from its single configuration to its maximum power dissipation of 2W. Trust Texas Instruments to provide reliable and efficient solutions for your electronic needs with the BD241E.

Feature Benefit Bullets

Polarity or Channel Type NPN

NPN transistors are commonly used in amplification and switching circuits due to their high input impedance and low output impedance.

Configuration SINGLE

Single configuration transistors are easy to use and implement in circuits, making them suitable for various applications.

Maximum Power Dissipation (Abs) 2 W

With a maximum power dissipation of 2W, this transistor can handle moderate power levels in circuits without overheating.

Minimum DC Current Gain (hFE) 10

A minimum DC current gain of 10 indicates that this transistor can provide significant current amplification in a circuit.

Maximum Operating Temperature 140 °C

The high maximum operating temperature of 140°C allows this transistor to operate reliably in a wide range of environments.

Maximum Collector Current (IC) 3 A

With a maximum collector current of 3A, this transistor can handle high current loads in circuits, making it versatile for various applications.

Nominal Transition Frequency (fT) 3 MHz

The nominal transition frequency of 3 MHz indicates that this transistor is capable of operating at high frequencies, making it suitable for radio frequency applications.

Technical Specifications

Other Function Transistors BD241E attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BD241E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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