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BD240A

Texas Instruments

BD240A by Texas Instruments

The Texas Instruments BD240A is a PNP transistor with max power dissipation of 30W, hFE of 40, and IC of 3A. Ideal for applications requiring high current amplification in a single configuration, with an operating temperature up to 150°C.

Median Price

$0.296

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Verical

USA . 1,022 parts In-Stock

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$0.301

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$0.269

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Rochester

USA . 253 parts In-Stock

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$0.291

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$0.241

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$0.215

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Digiode

USA . 7,668 parts In-Stock

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$0.226

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Vyrian

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Chip Stock

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Anansix

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Dan-Mar Components

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Fibra_Brandt Electronic GMBH

Germany . 99 parts In-Stock

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Century Electronics Ltd.

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LittleDiode

UK . 86 parts In-Stock

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Halfin

Belgium . 13 parts In-Stock

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Corphita

USA . 11,404 parts In-Stock

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$0.214

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Corohmni

South Africa . 222 parts In-Stock

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$0.238

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ChromeModa Solutions

Germany . 2,006 parts In-Stock

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$0.603

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$0.494

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$0.603

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Native Components

USA . 2,005 parts In-Stock

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$0.742

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$0.742

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IDEA Electronic Components Group

UK . 2,016 parts In-Stock

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$1.206

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$1.086

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DigiPath Technology Company

USA . 2,228 parts In-Stock

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$2.268

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MKK Technologies

India . 912 parts In-Stock

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$2.268

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Metaverse IC Inc.

Canada . 12,127 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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A-Z Elektronik GmbH

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Northwest PG Solutions

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Alle Elektronik GmbH

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TANS Electronics

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Authorized Procurement Solutions

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Glotronic Ltd.

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Problanco Electronics

Mexico . 3,459 parts In-Stock

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Assy Fe

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Supply Digital

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Parana Technologies

USA . 2,347 parts In-Stock

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SupplyDigital Components

Austria . 774 parts In-Stock

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UHIMA Technologies

Türkiye . 717 parts In-Stock

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Overview

Elevate your electronic projects with the high-quality BD240A PNP transistor from Texas Instruments. Known for their exceptional craftsmanship and innovation, Texas Instruments delivers reliable components that guarantee optimal performance. The BD240A is perfect for a wide range of applications in industries such as telecommunications, automotive, and consumer electronics. With a maximum power dissipation of 30W and a minimum DC current gain of 40, this transistor offers unmatched value and efficiency. Upgrade your designs with the BD240A and experience the superior quality and benefits it brings to your projects.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and can switch higher currents than NPN transistors, making this product suitable for power-related functions.

Configuration: SINGLE

Single configuration transistors are easy to use and require less complex circuit design, making this product user-friendly for basic electronic projects.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation of 30 W, this transistor can handle significant power loads without overheating, making it reliable for power-intensive applications.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures amplification of the input signal, allowing for efficient signal processing and control in electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle high levels of current flow, making it ideal for power control and regulation circuits.

Nominal Transition Frequency (fT): 3 MHz

The nominal transition frequency of 3 MHz indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency applications such as radio frequency amplification.

Technical Specifications

Other Function Transistors BD240A attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BD240A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-33-126-6460, 5961331266460

NIIN

331266460

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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