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3N80

Texas Instruments

3N80 by Texas Instruments

3N80 by Texas Instruments is a trigger device with 1A peak on-state current, 0.65V gate trigger voltage, and -60 to 155°C operating temperature range. Ideal for applications requiring low leakage current and high reliability in controlling electrical circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,338 parts In-Stock

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Digiode

USA . 703 parts In-Stock

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703

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Native Components

USA . 295 parts In-Stock

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$0.228

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$0.219

295

$0.228

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$0.219

Northwest PG Solutions

USA . 1,312 parts In-Stock

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$0.251

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$0.221

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$0.251

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$0.221

Parana Technologies

USA . 1,675 parts In-Stock

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$3.582

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$4.102

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$3.582

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$4.102

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DigiPath Technology Company

USA . 270 parts In-Stock

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$3.944

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270

$3.944

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IDEA Electronic Components Group

UK . 1,486 parts In-Stock

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$4.025

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$3.622

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1,486

$4.025

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$3.622

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ChromeModa Solutions

Germany . 1,202 parts In-Stock

1+ parts

$4.025

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$3.300

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$4.025

$3.300

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AZTECH Wire

Italy . 710 parts In-Stock

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$14.142

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710

$14.142

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One Stop Electronics

USA . 271 parts In-Stock

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$29.100

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271

$29.100

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Lixinc

USA . 405 parts In-Stock

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Corphita

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Overview

Unlock the power of precision and reliability with the Texas Instruments 3N80. Known for its superior quality and performance, this trigger device is designed to enhance a wide range of applications in various industries. From control systems to power management, the 3N80 delivers unmatched value and benefits to customers seeking efficiency and durability. Trust in Texas Instruments to provide innovative solutions that meet your needs and exceed your expectations. Elevate your projects with the 3N80 and experience the difference firsthand.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.001 mA

This low current requirement makes the product efficient and energy-saving, ideal for applications where power consumption is a concern.

Non Repetitive Peak On-state Current: 1 A

The high peak on-state current capability ensures the product can handle sudden surges in current without damage, making it reliable and durable.

Maximum On-state Current: 0.2 A

With a maximum on-state current of 0.2 A, this product is suitable for applications that require medium power handling capabilities.

Maximum Leakage Current: 0.02 mA

The low leakage current ensures minimal power loss and helps maintain the efficiency of the product over time.

Maximum Operating Temperature: 155 °C

The wide operating temperature range of -60°C to 155°C makes this product suitable for use in a variety of environments and conditions.

Maximum DC Gate Trigger Voltage: 0.65 V

The low gate trigger voltage requirement of 0.65 V ensures efficient and reliable triggering of the device, making it suitable for sensitive applications.

Repetitive Peak Off-state Voltage: 40 V

The high off-state voltage capability of 40 V provides a safety margin and ensures the product can withstand voltage spikes, making it suitable for a range of applications.

Technical Specifications

Other Function Trigger Devices 3N80 attributes and parameters. Explore more Other Function Trigger Devices devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.001 mA

Maximum DC Gate Trigger Voltage:

.65 V

Maximum Leakage Current:

.02 mA

Non Repetitive Peak On-state Current:

1 A

Maximum On-state Current:

.2 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

40 V

Sub-Category:

Other Trigger Devices

Surface Mount:

NO

Trade Compliance

3N80 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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