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1N561

Texas Instruments

1N561 by Texas Instruments

1N561 by Texas Instruments is a single rectifier diode with VF of 1.8V and max output current of 0.25A. Operating at 140°C, it has a max reverse voltage of 1000V and non-repetitive forward current of 1A. Ideal for power supply applications due to its high voltage capacity and low forward voltage drop.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Vyrian

USA . 6,823 parts In-Stock

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Digiode

USA . 3,169 parts In-Stock

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PUI

USA . 1,784 parts In-Stock

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Electronic Expediters

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Resion

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ECAB

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MISTER SPROCKETS

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Parana Technologies

USA . 295 parts In-Stock

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$1.407

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DigiPath Technology Company

USA . 1,070 parts In-Stock

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IDEA Electronic Components Group

UK . 1,320 parts In-Stock

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ChromeModa Solutions

Germany . 1,083 parts In-Stock

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One Stop Electronics

USA . 449 parts In-Stock

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AZTECH Wire

Italy . 643 parts In-Stock

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Corphita

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RTC Component Inc.

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Overview

Experience the superior quality and reliability of Texas Instruments with the 1N561 diode rectifier. This versatile component is perfect for a wide range of applications, providing smooth and efficient power conversion. With a maximum output current of 0.25A and a maximum repetitive peak reverse voltage of 1000V, this rectifier diode offers exceptional performance and durability. Trust Texas Instruments to deliver cutting-edge technology that meets your needs with precision and excellence. Elevate your projects with the 1N561 diode rectifier today.

Feature Benefit Bullets

Maximum Operating Temperature: 140 °C

The high maximum operating temperature of 140 °C ensures that the diode can withstand elevated temperatures without malfunctioning, making it suitable for various applications in different environments.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed specifically for converting AC to DC by allowing current to flow in only one direction, making it ideal for rectification applications.

Maximum Forward Voltage (VF): 1.8 V

The low maximum forward voltage of 1.8 V indicates minimal voltage drop across the diode when conducting, leading to higher efficiency and less power loss in the circuit.

Maximum Output Current: 0.25 A

With a maximum output current of 0.25 A, this diode can handle higher current loads without overheating or failing, ensuring reliable performance in various electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high maximum repetitive peak reverse voltage of 1000 V indicates the diode's ability to withstand reverse polarity voltages, making it suitable for applications where reverse voltage protection is crucial.

Maximum Non Repetitive Peak Forward Current: 1 A

With a maximum non-repetitive peak forward current of 1 A, this diode can handle short-term surge currents without damage, providing protection against high current spikes in the circuit.

Technical Specifications

Diodes & Rectifiers 1N561 attributes and parameters. Explore more Diodes & Rectifiers devices from Texas Instruments

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

140 Cel

Maximum Output Current:

.25 A

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

1N561 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-688-3943, 5961006883943

NIIN

006883943

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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