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VN2222LLTA

Temic Semiconductors

VN2222LLTA by Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) VN2222LLTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Temic Semiconductors

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VN2222LLTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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