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RABS20MM3G

Taiwan Semiconductor

RABS20MM3G by Taiwan Semiconductor

RABS20MM3G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, max output current of 2A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring fast reverse recovery time (0.3us) and low reverse current (5uA), suitable for surface mount installations.

Median Price

$0.192

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 388 parts In-Stock

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388

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 33 parts In-Stock

1+ parts

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100+ parts

$0.192

1k+ parts

$0.153

10k+ parts

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33

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$0.192

$0.153

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,000

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Overview

Enhance your electronic projects with the RABS20MM3G bridge rectifier diodes from Taiwan Semiconductor. Manufactured with top-quality materials and advanced technology, these diodes offer high performance and reliability. Ideal for various applications, these diodes provide efficient rectification of alternating current to direct current, ensuring smooth operation of your circuits. Experience the value and benefits of using Taiwan Semiconductor's RABS20MM3G bridge rectifier diodes in your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the components inside, making it suitable for various applications.

Config: BRIDGE, 4 ELEMENTS

Allows for full-wave rectification, making it efficient in converting AC to DC.

Maximum Reverse Recovery Time: 0.3 us

Ensures fast switching and minimal power loss during operation.

Maximum Reverse Current: 5 uA

Ensures low leakage current, enhancing the efficiency of the diode.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a wide range of operating environments.

Maximum Repetitive Peak Reverse Voltage: 1000 V

Capable of handling high reverse voltages, making it versatile for various applications.

Technical Specifications

Bridge Rectifier Diodes RABS20MM3G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Taiwan Semiconductor

Specs

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.3 us

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

RABS20MM3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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