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TS914IN

STMicroelectronics

TS914IN by STMicroelectronics

TS914IN by STMicroelectronics is a CMOS operational amplifier featuring a max input offset voltage of 12 mV, low bias current of 0.3 nA, and a nominal voltage of 3 V. It’s ideal for automotive applications due to its wide temp range (-40 °C to 125°C). With a gain of 2000 and bandwidth of 800 kHz, it ensures high performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,963 parts In-Stock

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Digiode

USA . 2,830 parts In-Stock

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2,830

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Anansix

USA . 1,785 parts In-Stock

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1,785

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Ashlea Components Ltd

UK . 26 parts In-Stock

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26

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Component Electronics Inc.

Canada . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,366 parts In-Stock

1+ parts

$4.353

100+ parts

-

1k+ parts

$3.917

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1,366

$4.353

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$3.917

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Microchip USA

USA . 220 parts In-Stock

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$5.946

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220

$5.946

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MKK Technologies

India . 1,429 parts In-Stock

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$8.185

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1,429

$8.185

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DigiPath Technology Company

USA . 1,429 parts In-Stock

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$8.185

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1,429

$8.185

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AZTECH Wire

Italy . 942 parts In-Stock

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$17.810

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942

$17.810

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Component Stockers USA

USA . 579 parts In-Stock

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$99.990

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579

$99.990

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A-Z Elektronik GmbH

Germany . 6,308 parts In-Stock

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Vigor

Singapore . 2,390 parts In-Stock

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Parana Technologies

USA . 1,641 parts In-Stock

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$5.204

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$5.204

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Corphita

USA . 1,260 parts In-Stock

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Overview

Elevate your projects with the TS914IN from STMicroelectronics, a leading name in innovation and quality. This operational amplifier excels in diverse applications, offering impressive performance in automotive, industrial, and consumer electronics. With its micropower design, ultra-low bias currents, and robust temperature range, it ensures reliability and efficiency. Trust STMicroelectronics for cutting-edge technology that delivers exceptional value and enhances your designs seamlessly!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and lightweight characteristics, making it suitable for various applications.

Maximum Input Offset Voltage: 12000 uV

A maximum input offset voltage of 12 mV indicates that the op-amp can maintain accuracy in high-precision applications.

Maximum Average Bias Current (IIB): 0.0003 uA

The low bias current ensures minimal interference with the input signal, enhancing overall performance in low-power designs.

No. of Functions: 4

With multiple functions, this op-amp is versatile and can be used in various circuit configurations, adding to design flexibility.

Package Shape: RECTANGULAR

The rectangular shape helps in efficient PCB layout, optimizing space usage for compact designs.

Nominal Common Mode Reject Ratio: 70 dB

A CMRR of 70 dB indicates good performance in rejecting noise and interference, crucial for enhancing signal integrity.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this op-amp ideal for battery-operated devices and low-power applications.

Power Supplies (V): +-1.35/+-8/2.7/16

This range of power supply options provides design flexibility and adaptability to various circuit requirements.

No. of Terminals: 14

With 14 terminals, this op-amp can accommodate multiple connections and functionalities, enhancing its application range.

Package Style (Meter): IN-LINE

The in-line package style simplifies assembly and integration into circuits, ensuring reliability in both manual and automated processes.

Maximum Supply Voltage Limit: 18 V

A maximum supply voltage limit of 18V allows for use in a wide range of applications without risking component damage.

Maximum Operating Temperature: 125 °C

A high operating temperature limit of 125 °C makes this op-amp suitable for automotive and high-temperature environments.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

An exceptionally low maximum bias current at 25 °C further underscores the device's suitability for high-accuracy applications.

Frequency Compensation: YES

In-built frequency compensation allows for stable performance across a variety of frequencies, enhancing application reliability.

Minimum Voltage Gain: 2000

A minimum voltage gain of 2000 supports applications requiring significant signal amplification without added complexity.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C makes this op-amp suitable for harsh environments, such as automotive and industrial applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability, ensuring reliable connections in various assembly processes.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB designs and can simplify layout requirements in complex circuits.

Maximum Seated Height: 5.33 mm

A compact height of 5.33 mm is advantageous for space-constrained designs, enabling more compact and efficient circuit layouts.

Width: 7.62 mm

The width of 7.62 mm is optimal for standard PCB layouts, making the device easy to integrate into various designs.

Micropower: YES

Being a micropower device makes it ideal for energy-efficient applications, extending battery life in portable devices.

Length: 19.05 mm

The length of 19.05 mm suits typical in-line packaging, facilitating straightforward integration into circuits.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this op-amp meets stringent reliability and performance standards needed in vehicles.

Low-Bias: YES

The low-bias feature enhances accuracy in sensor applications and other precision electronics, minimizing signal interference.

Nominal Unity Gain Bandwidth: 800 kHz

An 800 kHz bandwidth allows for a wide range of frequency applications, ensuring effective signal processing in various systems.

Technology: CMOS

The CMOS technology contributes to low power consumption while maintaining high performance, suitable for modern, efficient designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and stability in harsh environments, vital for reliability in assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

This op-amp serves as a versatile building block in analog circuits, essential for signal conditioning and processing tasks.

Maximum Supply Current: 2.8 mA

A maximum supply current of 2.8 mA allows for low-power consumption, making this op-amp suitable for portable applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides high stability and performance in feedback applications, ensuring reliable operation in circuits.

Packing Method: TUBE

The tube packing method ensures safe and easy handling during manufacturing, preventing damage to components during transit.

Nominal Slew Rate: 0.5 V/us

A nominal slew rate of 0.5 V/us indicates good fast response capability, suitable for many high-speed signal processing applications.

Terminal Pitch: 2.54 mm

A standard terminal pitch of 2.54 mm aids in compatibility with various PCB designs and simplifies assembly processes.

Technical Specifications

Operational Amplifiers (Op Amps) TS914IN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

800 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

12000 uV

Minimum Voltage Gain:

2000

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.8 mA

Physical Characteristics

Length:

0.75 in (19.05 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.21 in (5.33 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TS914IN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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