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TS914AIN

STMicroelectronics

TS914AIN by STMicroelectronics

TS914AIN by STMicroelectronics is a CMOS operational amplifier featuring a max input offset voltage of 7 mV, low bias current of 0.3 nA, and a nominal voltage of 3 V. It's ideal for automotive applications due to its wide temp range (-40 °C to 125°C). With four functions in a compact package, it ensures efficient performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,302 parts In-Stock

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Digiode

USA . 4,040 parts In-Stock

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4,040

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Anansix

USA . 1,132 parts In-Stock

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1,132

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,055 parts In-Stock

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$3.557

100+ parts

-

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$3.201

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1,055

$3.557

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$3.201

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MKK Technologies

India . 2,372 parts In-Stock

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$6.688

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$6.688

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DigiPath Technology Company

USA . 2,372 parts In-Stock

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$6.688

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2,372

$6.688

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AZTECH Wire

Italy . 1,158 parts In-Stock

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$19.700

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1,158

$19.700

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QUARKTWIN TECHNOLOGY LTD

USA . 13,264 parts In-Stock

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Vigor

Singapore . 5,000 parts In-Stock

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Microchip USA

USA . 2,708 parts In-Stock

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Corphita

USA . 2,563 parts In-Stock

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Parana Technologies

USA . 986 parts In-Stock

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$4.253

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986

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$4.253

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Kepictronics

USA . 942 parts In-Stock

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942

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Overview

Experience unparalleled performance with the TS914AIN operational amplifier from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for versatility across automotive and consumer applications, this micro-power Op Amp delivers remarkable precision with ultra-low bias currents and exceptional stability. Trust STMicroelectronics to elevate your designs with reliability and efficiency, ensuring you stay ahead in today’s competitive landscape.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body provides good protection and insulation, making the op-amp suitable for various applications.

Maximum Input Offset Voltage: 7000 uV

With a maximum input offset voltage of 7000 uV, this op-amp offers relatively high precision, suitable for applications where accuracy is crucial.

Maximum Average Bias Current (IIB): 0.0003 uA

The low bias current ensures minimal impact on circuit operation, making it ideal for sensitive applications like low-power sensors.

No. of Functions: 4

Having four functions in one package saves space and reduces complexity in circuit design, making it a versatile choice in multi-functional applications.

Package Shape: RECTANGULAR

The rectangular shape is commonly used, ensuring compatibility with most PCB layouts and design requirements.

Nominal Common Mode Reject Ratio: 70 dB

A high common mode rejection ratio means improved performance in noisy environments, making the op-amp suitable for automotive and precision applications.

Nominal Supply Voltage / Vsup (V): 3

The low supply voltage requirement allows for power-efficient designs, making this op-amp ideal for battery-powered devices.

Power Supplies (V): ±1.35/±8/2.7/16

The flexibility in power supply options accommodates a wide range of applications, enhancing its usability across different circuit designs.

No. of Terminals: 14

With 14 terminals, this op-amp offers various connectivity options, allowing for more complex circuit configurations.

Package Style (Meter): IN-LINE

The in-line package style simplifies integration into PCBs and is commonly used in through-hole applications.

Maximum Supply Voltage Limit: 18 V

A high maximum supply voltage limit ensures compatibility with a wide variety of electronic designs, catering to different voltage requirements.

Maximum Operating Temperature: 125 °C

The capability to operate at high temperatures makes this op-amp suitable for automotive and industrial applications where heat is a factor.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

The extremely low bias current improves performance in low-voltage circuits and allows for more efficient signal amplification.

Frequency Compensation: YES

Integrated frequency compensation ensures stability in frequency response, critical for high-frequency applications.

Minimum Voltage Gain: 2000

A high minimum voltage gain facilitates significant amplification of weak signals, enhancing the op-amp's versatility in signal processing.

Minimum Operating Temperature: -40 °C

The capability to operate at low temperatures expands the range of applications, making it suitable for harsh environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and low oxidation, ensuring reliable performance in connections.

Terminal Position: DUAL

The dual terminal position allows for easier routing and placement on PCBs, simplifying the design process.

Maximum Seated Height: 5.33 mm

A compact seated height is optimal for space-constrained designs, making this op-amp suitable for miniaturized applications.

Width: 7.62 mm

The moderate width facilitates easy integration into standard PCB layouts while preserving performance.

Micropower: YES

Micropower operation minimizes energy consumption, making it ideal for battery-operated and energy-saving applications.

Length: 19.05 mm

The length balances space efficiency with performance, suitable for a variety of mounting configurations.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this op-amp is robust and reliable, meeting the stringent requirements of the automotive industry.

Low-Bias: YES

Low-bias characteristics improve accuracy and reduce signal interference, making it ideal for precision instrumentation.

Nominal Unity Gain Bandwidth: 800 kHz

An 800 kHz bandwidth allows for effective amplification of a wide range of signal frequencies, enhancing versatility in various applications.

Technology: CMOS

CMOS technology ensures low power usage and high speed, making this op-amp suitable for modern, energy-efficient designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for robust connections in circuit assemblies, enhancing reliability in physical stresses.

Amplifier Type: OPERATIONAL AMPLIFIER

As a traditional operational amplifier, it can be used in a wide array of applications, from signal conditioning to filtering.

Maximum Supply Current: 2.8 mA

A low supply current enhances battery life in portable applications, making it suitable for energy-sensitive designs.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture allows for flexibility in feedback configurations, enhancing circuit design possibilities.

Packing Method: TUBE

Tubes provide safe and efficient packaging for transport and handling, ensuring product integrity until installation.

Nominal Slew Rate: 0.5 V/us

The moderate slew rate supports the processing of fast-changing signals, making it suitable for audio and control applications.

Terminal Pitch: 2.54 mm

The standard terminal pitch facilitates easy component placement and soldering on PCBs, enhancing manufacturability.

Technical Specifications

Operational Amplifiers (Op Amps) TS914AIN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

800 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

2000

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.8 mA

Physical Characteristics

Length:

0.75 in (19.05 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.21 in (5.33 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TS914AIN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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