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TN2010H-6G

STMicroelectronics

TN2010H-6G by STMicroelectronics

TN2010H-6G from STMicroelectronics is a versatile SCR ideal for power control applications. It features a max on-state current of 12.7 A, non-repetitive peak on-state current of 197 A, and operates b/w -40 °C to 150 °C. Its compact design suits surface mount configurations effectively.

Median Price

$0.820

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,932 parts In-Stock

1+ parts

$0.820

100+ parts

$0.524

1k+ parts

$0.439

10k+ parts

-

1,932

$0.820

$0.524

$0.439

-

Mouser Electronics

USA . 1,544 parts In-Stock

1+ parts

$0.820

100+ parts

$0.524

1k+ parts

$0.439

10k+ parts

-

1,544

$0.820

$0.524

$0.439

-

Avnet

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,295 parts In-Stock

1+ parts

$0.779

100+ parts

-

1k+ parts

-

10k+ parts

-

4,295

$0.779

-

-

-

Vyrian

USA . 2,562 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

-

10k+ parts

-

2,562

$0.820

-

-

-

Anansix

USA . 1,491 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,491

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 979 parts In-Stock

1+ parts

$0.738

100+ parts

-

1k+ parts

-

10k+ parts

-

979

$0.738

-

-

-

IDEA Electronic Components Group

UK . 1,617 parts In-Stock

1+ parts

$2.127

100+ parts

-

1k+ parts

$1.914

10k+ parts

-

1,617

$2.127

-

$1.914

-

MKK Technologies

India . 1,209 parts In-Stock

1+ parts

$4.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,209

$4.000

-

-

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DigiPath Technology Company

USA . 1,209 parts In-Stock

1+ parts

$4.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,209

$4.000

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-

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Microchip USA

USA . 9,176 parts In-Stock

1+ parts

$8.450

100+ parts

-

1k+ parts

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10k+ parts

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9,176

$8.450

-

-

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Parana Technologies

USA . 1,496 parts In-Stock

1+ parts

-

100+ parts

$2.543

1k+ parts

-

10k+ parts

-

1,496

-

$2.543

-

-

Overview

Elevate your designs with the TN2010H-6G from STMicroelectronics, a top-tier Silicon Controlled Rectifier (SCR) that promises unparalleled reliability and performance. Crafted with precision in durable plastic/epoxy packaging, this versatile component excels in demanding applications, ensuring efficient power management and safety. Enjoy peace of mind with ST's reputation for quality, as you harness the robust capabilities of the TN2010H-6G to drive innovation in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material enhances the component's resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 10 mA

With a low gate trigger current, this SCR ensures minimal power consumption while still achieving reliable activation.

Configuration: SINGLE

A single configuration simplifies integration into circuits, making it easier to use in various applications.

Non Repetitive Peak On-state Current: 197 A

High peak on-state current capability allows this SCR to handle substantial load demands, enhancing performance in power control applications.

Surface Mount: YES

The surface mount capability facilitates compact designs and automated assembly, making it ideal for modern electronics.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space, supporting better layout options.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering capabilities, ensuring reliable connections during assembly.

Maximum On-state Current: 12.7 A

This current rating offers a good balance between performance and thermal management, making it suitable for various applications.

Repetitive Peak Reverse Voltage: 600 V

With a high reverse voltage rating, this SCR can protect against over-voltage conditions, ensuring durability in demanding environments.

Maximum Repetitive Peak Off-state Leakage Current: 3900 uA

Low leakage current contributes to energy efficiency and reduces heat generation in the circuit.

No. of Terminals: 2

The dual-terminal design simplifies connection in applications, enhancing ease of integration.

Package Style (Meter): SMALL OUTLINE

The small outline style enables compact designs, making it suitable for size-constrained applications.

Maximum Operating Temperature: 150 °C

A high operating temperature range makes this SCR ideal for high-heat environments, ensuring reliable performance.

Trigger Device Type: SCR

As a silicon controlled rectifier, it is ideal for applications requiring efficient control of high power with low control currents.

Minimum Operating Temperature: -40 °C

With a wide temperature range, this SCR can perform reliably in extreme conditions, making it versatile for various climates.

Terminal Position: SINGLE

Single terminal position optimizes PCB layout for better space management in circuit designs.

Maximum RMS On-state Current: 20 A

This rating ensures safe and effective performance under continuous load, enhancing application reliability.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage minimizes the risk of damage to microcontroller outputs, making it a safe choice for designers.

Case Connection: ANODE

Anode case connection allows for straightforward designs, easily integrating this SCR into power circuits.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage tolerance protects circuits from voltage spikes, improving reliability in power electronics.

Minimum Critical Rate of Rise of Off-state Voltage: 400 V/us

This specification ensures the SCR can handle rapid voltage changes, making it suitable for dynamic applications.

Maximum Holding Current: 40 mA

A low holding current requirement increases circuit efficiency and extends the life of components.

Nominal Circuit Commutated Turn-off Time: 70 us

Fast turn-off time allows for high-frequency switching applications, improving the overall performance of power circuits.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN2010H-6G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

400 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSSO-G2

Non Repetitive Peak On-state Current:

197 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

12.7 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

20 A

Maximum Repetitive Peak Off-state Leakage Current:

3900 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TN2010H-6G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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