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TD6001S

STMicroelectronics

TD6001S by STMicroelectronics

STMicroelectronics TD6001S is a Silicon Controlled Rectifier with 600V repetitive peak off-state voltage. It features 0.2mA max DC gate trigger current, 15A non-repetitive peak on-state current, and 1.6A max on-state current. Ideal for applications requiring SCR trigger devices in circuits with temperatures ranging from -55 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,580 parts In-Stock

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Anansix

USA . 1,819 parts In-Stock

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1,819

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Digiode

USA . 128 parts In-Stock

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128

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 98 parts In-Stock

1+ parts

$2.838

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$2.554

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98

$2.838

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MKK Technologies

India . 900 parts In-Stock

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$5.337

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900

$5.337

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DigiPath Technology Company

USA . 900 parts In-Stock

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$5.337

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900

$5.337

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Corphita

USA . 3,763 parts In-Stock

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Parana Technologies

USA . 1,904 parts In-Stock

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$3.394

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$3.394

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Overview

Unlock the power of reliable and efficient electrical control with the TD6001S from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Silicon Controlled Rectifiers (SCR) that provide superior performance and durability. Perfect for a wide range of applications, this SCR offers customers unmatched value, benefits, and advantages. Trust STMicroelectronics to provide you with the cutting-edge technology you need to succeed in today's competitive market.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient and precise control of the SCR, resulting in reliable performance.

Non Repetitive Peak On-state Current: 15 A

High peak on-state current capability ensures the SCR can handle sudden spikes in current without damage, making it suitable for demanding applications.

Maximum On-state Current: 1.6 A

The maximum on-state current rating indicates the SCR's capacity to carry continuous current without overheating, making it ideal for sustained operation.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss and ensures the SCR operates efficiently and reliably.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this SCR can function effectively in a variety of environments and industrial settings.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over current flow and is suitable for a wide range of power control applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures efficient and precise triggering of the SCR, enhancing control and reliability in operation.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating allows the SCR to withstand voltage spikes and ensures reliable performance in high voltage applications.

Nominal Circuit Commutated Turn-off Time: 60 us

Fast turn-off time enhances the SCR's ability to control current flow and respond quickly to changes in the circuit, making it suitable for dynamic applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TD6001S attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

60 us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

JESD-609 Code:

e0

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

15 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

TD6001S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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