Loading...

STV3NA80

STMicroelectronics

STV3NA80 by STMicroelectronics

STV3NA80 by STMicroelectronics is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 3.1 A and power dissipation up to 100 W, operating at temperatures up to 150 °C. Ideal for applications in power supplies and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,632

-

-

-

-

Anansix

USA . 950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

950

-

-

-

-

Vyrian

USA . 70 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 24 parts In-Stock

1+ parts

$0.949

100+ parts

-

1k+ parts

$0.854

10k+ parts

-

24

$0.949

-

$0.854

-

MKK Technologies

India . 639 parts In-Stock

1+ parts

$1.784

100+ parts

-

1k+ parts

-

10k+ parts

-

639

$1.784

-

-

-

DigiPath Technology Company

USA . 639 parts In-Stock

1+ parts

$1.784

100+ parts

-

1k+ parts

-

10k+ parts

-

639

$1.784

-

-

-

Corphita

USA . 3,153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,153

-

-

-

-

Parana Technologies

USA . 1,096 parts In-Stock

1+ parts

-

100+ parts

$1.134

1k+ parts

-

10k+ parts

-

1,096

-

$1.134

-

-

Overview

Unlock unparalleled performance with the STV3NA80 from STMicroelectronics, a leader in innovative semiconductor solutions. This N-channel Power FET combines efficiency and reliability, making it ideal for demanding applications in automotive, industrial, and consumer electronics. Enjoy enhanced durability with high power dissipation capabilities and an impressive operating temperature range. Elevate your projects with a component designed to deliver quality and value, ensuring your success in every endeavor.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better efficiency and faster switching speeds, making them ideal for high-frequency applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces PCB space, allowing for easy integration into various applications.

Surface Mount: YES

Surface mount capability enables compact designs and automated assembly, providing versatility in modern electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows for low-power consumption in the off state, improving overall energy efficiency in circuits.

Maximum Drain Current (Abs) (ID): 3.1 A

With a maximum drain current of 3.1 A, this FET can handle a significant load, making it suitable for various power applications.

Maximum Power Dissipation (Abs): 100 W

A high power dissipation capability of 100 W ensures reliable performance and thermal management in demanding environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high input impedance and low on-resistance, contributing to efficient switching and minimal signal loss.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows the product to function in high-heat applications, increasing its durability and reliability.

Technical Specifications

Power Field Effect Transistors (FET) STV3NA80 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.1 A

Maximum Drain Current (ID):

3.1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

STV3NA80 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2