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STTH312B

STMicroelectronics

STTH312B by STMicroelectronics

STTH312B by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode, ideal for applications requiring rapid switching. It features a max reverse recovery time of 0.115 µs, 1200 V peak reverse voltage, and operates up to 175 °C. Its compact design ensures efficient performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 9,500 parts In-Stock

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9,500

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Vyrian

USA . 6,849 parts In-Stock

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6,849

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Digiode

USA . 2,854 parts In-Stock

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2,854

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Pegasus Components GmbH

Germany . 750 parts In-Stock

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750

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Anansix

USA . 94 parts In-Stock

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94

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 746 parts In-Stock

1+ parts

$0.143

100+ parts

-

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$0.128

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746

$0.143

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$0.128

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MKK Technologies

India . 536 parts In-Stock

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$0.268

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536

$0.268

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DigiPath Technology Company

USA . 536 parts In-Stock

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$0.268

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536

$0.268

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AZTECH Wire

Italy . 224 parts In-Stock

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$18.460

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224

$18.460

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Component Stockers USA

USA . 766 parts In-Stock

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$99.990

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766

$99.990

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Corphita

USA . 2,241 parts In-Stock

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2,241

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Parana Technologies

USA . 1,094 parts In-Stock

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$0.170

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1,094

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$0.170

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Perfect Parts

USA . 6 parts In-Stock

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Overview

Upgrade your designs with the STTH312B from STMicroelectronics, a top-tier choice in high voltage ultra-fast soft recovery diodes. Engineered for exceptional performance and reliability, this surface mount diode excels in critical applications requiring swift recovery times and robustness under extreme conditions. Trust STMicroelectronics’ proven expertise to enhance efficiency and longevity in your projects, delivering unparalleled value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental stress, making it reliable for various applications.

Config: SINGLE

A single diode configuration simplifies design and integration in circuits, making it a practical choice for many applications.

Surface Mount: YES

Surface mount technology allows for compact design and a reduction in overall product size, facilitating efficient space utilization on PCBs.

Maximum Reverse Recovery Time: 0.115 µs

A low reverse recovery time enhances switching efficiency, making this diode suitable for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular package shape is optimal for surface mounting and provides a stable structure for circuit applications.

No. of Terminals: 2

With only two terminals, this diode is easy to use and fits well in simple circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style promotes flexibility in PCB layouts, especially in space-constrained designs.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Designed for high voltage and ultra-fast applications, this diode can handle demanding environments and improve circuit resilience.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can function reliably in high-temperature applications, ensuring longevity and stability.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, contributing to overall product reliability.

Terminal Position: SINGLE

Having a single terminal position simplifies board layout and assembly processes.

Case Connection: CATHODE

The cathode case connection provides clear identification for circuit design, which aids in accurate assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.65 V

A low forward voltage drop maximizes efficiency and minimizes heat generation in the circuit.

Maximum Output Current: 3 A

This diode can handle a sufficient maximum output current for most applications, making it versatile for various uses.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and reliability in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High repetitive peak reverse voltage capability makes this component applicable in high-voltage circuits, ensuring reliable operation.

Maximum Non Repetitive Peak Forward Current: 35 A

The ability to handle high non-repetitive peak forward currents provides design flexibility for surge applications.

Diode Element Material: SILICON

Silicon as the diode element material offers high reliability and performance in electrical applications.

Technical Specifications

Diodes & Rectifiers STTH312B attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.65 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.115 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH312B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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