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STTH30R03CG

STMicroelectronics

STTH30R03CG by STMicroelectronics

STTH30R03CG by STMicroelectronics is a hyper fast recovery rectifier diode with a max reverse recovery time of 0.035 µs and supports up to 15 A output current. It features a common cathode configuration in a compact SO package. Ideal for high-efficiency applications, it operates at temperatures up to 175 °C.

Median Price

$3.460

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 186 parts In-Stock

1+ parts

$3.460

100+ parts

$2.600

1k+ parts

$2.250

10k+ parts

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186

$3.460

$2.600

$2.250

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Rebound Electronics

UK . 7,889 parts In-Stock

1+ parts

-

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7,889

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Martec Srl

Italy . 5,970 parts In-Stock

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5,970

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Vyrian

USA . 5,489 parts In-Stock

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5,489

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Digiode

USA . 3,632 parts In-Stock

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3,632

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Anansix

USA . 222 parts In-Stock

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222

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ECAB

Sweden . 57 parts In-Stock

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57

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,705 parts In-Stock

1+ parts

$0.128

100+ parts

-

1k+ parts

$0.115

10k+ parts

-

1,705

$0.128

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$0.115

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MKK Technologies

India . 445 parts In-Stock

1+ parts

$0.240

100+ parts

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445

$0.240

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DigiPath Technology Company

USA . 445 parts In-Stock

1+ parts

$0.240

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445

$0.240

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AZTECH Wire

Italy . 283 parts In-Stock

1+ parts

$21.290

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283

$21.290

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Kepictronics

USA . 18,200 parts In-Stock

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18,200

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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A-Z Elektronik GmbH

Germany . 7,286 parts In-Stock

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7,286

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Perfect Parts

USA . 1,234 parts In-Stock

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1,234

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Parana Technologies

USA . 193 parts In-Stock

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$0.153

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193

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$0.153

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Corphita

USA . 160 parts In-Stock

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160

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GreenTree Electronics

Israel . 105 parts In-Stock

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105

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Overview

Elevate your designs with the STTH30R03CG from STMicroelectronics, a premier choice for high-performance rectification. Crafted with meticulous quality, this hyper-fast recovery diode ensures exceptional reliability in demanding applications. With its robust thermal management and compact surface mount design, it effortlessly fits into space-constrained environments. Trust in STMicroelectronics' legacy of innovation and enjoy enhanced efficiency, reduced power loss, and longevity in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent insulation and durability, making the diode resistant to environmental factors.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient rectification in various circuit designs, enhancing versatility.

Surface Mount: YES

Surface mount technology enables compact design, making it suitable for space-constrained applications.

Maximum Reverse Recovery Time: 0.035 µs

A fast reverse recovery time ensures minimal switching losses, making it ideal for high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient heat dissipation and easy integration into circuit boards.

No. of Terminals: 2

Having two terminals facilitates straightforward connections in a variety of circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact footprint, which is advantageous for modern electronic designs.

Application: HYPER FAST RECOVERY

Hyper fast recovery characteristics make this diode suitable for high-frequency applications, enhancing overall circuit efficiency.

Maximum Operating Temperature: 175 °C

A high operating temperature rating ensures reliable performance in demanding conditions, providing robustness.

Terminal Finish: MATTE TIN

The matte tin finish offers excellent solderability, which improves the reliability of the electrical connections.

Terminal Position: SINGLE

A single terminal position design simplifies layout and integration into various circuit boards.

Case Connection: CATHODE

With cathode connection, this product is easy to work with in standard rectifier applications.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is optimized for converting AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.4 V

A maximum forward voltage of 1.4V allows for efficient power management in the circuit, reducing energy losses.

Maximum Output Current: 15 A

With a high output current rating of 15A, this diode is suitable for a wide range of power applications.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability and facilitates easy soldering in PCB applications.

No. of Elements: 2

Having two elements contributes to better performance and efficiency in rectification tasks.

Maximum Repetitive Peak Reverse Voltage: 300 V

A high peak reverse voltage rating ensures reliability in high-voltage applications, preventing breakdowns.

Maximum Non-Repetitive Peak Forward Current: 120 A

The capability to handle non-repetitive peak currents up to 120A allows this diode to handle large surge currents safely.

Diode Element Material: SILICON

Silicon material for the diode elements offers high efficiency and stability in various electrical environments.

Technical Specifications

Diodes & Rectifiers STTH30R03CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HYPER FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH30R03CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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