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STTH30L06P

STMicroelectronics

STTH30L06P by STMicroelectronics

STTH30L06P by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and handling up to 30 A output current. It operates at temperatures up to 175 °C with a peak reverse voltage of 600 V. Ideal for applications requiring efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,802 parts In-Stock

1+ parts

-

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6,802

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Digiode

USA . 2,860 parts In-Stock

1+ parts

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2,860

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Anansix

USA . 2,210 parts In-Stock

1+ parts

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2,210

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,142 parts In-Stock

1+ parts

$0.084

100+ parts

-

1k+ parts

$0.075

10k+ parts

-

1,142

$0.084

-

$0.075

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MKK Technologies

India . 1,878 parts In-Stock

1+ parts

$0.157

100+ parts

-

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-

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1,878

$0.157

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DigiPath Technology Company

USA . 1,878 parts In-Stock

1+ parts

$0.157

100+ parts

-

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-

10k+ parts

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1,878

$0.157

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AZTECH Wire

Italy . 806 parts In-Stock

1+ parts

$21.460

100+ parts

-

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806

$21.460

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QUARKTWIN TECHNOLOGY LTD

USA . 11,697 parts In-Stock

1+ parts

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11,697

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Corphita

USA . 3,237 parts In-Stock

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3,237

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Parana Technologies

USA . 2,315 parts In-Stock

1+ parts

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100+ parts

$0.100

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2,315

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$0.100

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Overview

Unlock superior performance with the STTH30L06P from STMicroelectronics, a leading name in semiconductor innovation. This high voltage ultra-fast recovery rectifier diode is designed for demanding applications, delivering unmatched reliability and efficiency. With its robust construction and impressive thermal resilience, enjoy benefits such as reduced power losses and enhanced system longevity. Elevate your projects with a choice that combines quality, performance, and trust from an industry leader!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and protects the diode against environmental factors, making it a reliable choice for various applications.

Config: SINGLE

A single configuration simplifies installation and is suitable for designs requiring individual diode placement.

Maximum Reverse Recovery Time: 0.09 us

A low reverse recovery time ensures efficient operation and reduces power losses, making this diode ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the PCB, allowing for efficient layout and potentially reducing overall design size.

No. of Terminals: 2

Two terminals provide straightforward connections, simplifying the integration of this diode into various circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure mounting options, improving stability and thermal performance in high-power applications.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage applications, this diode's ultra-fast recovery feature is critical for achieving reliable performance in demanding environments.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode is suitable for applications in harsh environments without compromising performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and resistance to oxidation, ensuring reliable connections over time.

Terminal Position: SINGLE

A single terminal position streamlines circuit board design and enhances ease of soldering during assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

With a low forward voltage drop, this diode minimizes energy loss, enhancing overall system efficiency.

Maximum Output Current: 30 A

A high maximum output current rating supports a wide range of applications, from consumer electronics to industrial machinery.

Terminal Form: THROUGH-HOLE

Through-hole terminal form improves mechanical stability on printed circuit boards, making it easier to solder and handle.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high peak reverse voltage, this diode can handle significant voltage spikes, making it suitable for demanding applications.

Maximum Non-Repetitive Peak Forward Current: 160 A

The ability to withstand high non-repetitive peak forward currents ensures reliability during transient conditions, important for power surge protection.

Diode Element Material: SILICON

Silicon as the diode element material guarantees good thermal stability and reliable performance, suitable for a variety of electronic applications.

Technical Specifications

Diodes & Rectifiers STTH30L06P attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.09 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH30L06P Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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