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STTH106

STMicroelectronics

STTH106 by STMicroelectronics

STTH106 by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.045 µs and can handle up to 600 V peak reverse voltage. It operates at a max temp of 175 °C, making it ideal for high-performance applications in power supplies. Its compact design features an isolated case connection and matte tin terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,082 parts In-Stock

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7,082

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Anansix

USA . 2,098 parts In-Stock

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2,098

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Digiode

USA . 670 parts In-Stock

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670

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,935 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

$0.121

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1,935

$0.134

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$0.121

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MKK Technologies

India . 525 parts In-Stock

1+ parts

$0.253

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525

$0.253

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DigiPath Technology Company

USA . 525 parts In-Stock

1+ parts

$0.253

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525

$0.253

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AZTECH Wire

Italy . 1,038 parts In-Stock

1+ parts

$22.150

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1,038

$22.150

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Corphita

USA . 3,841 parts In-Stock

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3,841

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Parana Technologies

USA . 1,274 parts In-Stock

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100+ parts

$0.161

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1,274

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$0.161

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Assy Fe

Spain . 20 parts In-Stock

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20

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Overview

Experience unparalleled reliability with the STTH106 from STMicroelectronics, a leader in high-performance diodes. Designed for efficiency, this rectifier diode excels in demanding applications, ensuring minimal energy loss and maximum durability at elevated temperatures. Its robust construction and innovative design provide peace of mind for engineers seeking top-tier quality. Elevate your projects with the STTH106 and enjoy enhanced performance and longevity, making it the smart choice for modern electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and protection against environmental factors, making the diode suitable for various applications.

Config: SINGLE

A single configuration provides simplicity in design and ease of integration, making it user-friendly for engineers.

Maximum Reverse Recovery Time: 0.045 µs

A fast reverse recovery time ensures efficient switching performance, making this diode ideal for high-frequency applications.

Package Shape: ROUND

The round package shape allows for efficient space utilization on circuit boards, making it suitable for compact designs.

Number of Terminals: 2

With only two terminals, this diode is easy to install and connect, simplifying the design process.

Package Style (Meter): LONG FORM

The long form package style enhances heat dissipation, improving reliability and performance in high-load conditions.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows for use in demanding environments, ensuring the diode operates under extreme conditions without failure.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliability over time.

Terminal Position: AXIAL

An axial terminal position allows for easy integration into both through-hole and surface-mount designs, enhancing versatility.

Case Connection: ISOLATED

An isolated case connection reduces the risk of unintended electrical paths, enhancing safety and reliability in circuits.

Diode Type: RECTIFIER DIODE

Being a rectifier diode enables efficient conversion of AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

A low maximum forward voltage drop minimizes power loss during operation, increasing efficiency in applications.

Maximum Output Current: 1 A

Supporting a maximum output current of 1 A makes this diode suitable for a range of medium-power applications.

Terminal Form: WIRE

The wire terminal form allows for flexible and easy connections, facilitating quick assembly and repair.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high repetitive peak reverse voltage rating makes this diode suitable for use in high-voltage applications, enhancing its versatility.

Maximum Non-Repetitive Peak Forward Current: 25 A

A high peak forward current capability allows this diode to handle surge conditions effectively, providing added reliability in transient situations.

Diode Element Material: SILICON

Manufactured with silicon, this diode ensures effective performance, reliability, and stability in diverse applications.

Technical Specifications

Diodes & Rectifiers STTH106 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.045 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH106 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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