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STTA2006PIRG

STMicroelectronics

STTA2006PIRG by STMicroelectronics

STTA2006PIRG from STMicroelectronics is a fast recovery diode with a max DC reverse voltage of 600V and an average rectified current of 20A. It features a low forward voltage drop of 1.75V at 20A, making it ideal for power supply applications. Designed for high efficiency, it operates up to 150 °C in bulk packaging.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

STTA2006PIRG by STMicroelectronics
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Vyrian

USA . 8,896 parts In-Stock

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Digiode

USA . 3,629 parts In-Stock

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Anansix

USA . 1,558 parts In-Stock

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AZTECH Wire

Italy . 971 parts In-Stock

1+ parts

$14.610

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971

$14.610

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Component Stockers USA

USA . 637 parts In-Stock

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$99.990

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637

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 25,192 parts In-Stock

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25,192

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Corphita

USA . 4,288 parts In-Stock

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Parana Technologies

USA . 2,351 parts In-Stock

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MKK Technologies

India . 1,819 parts In-Stock

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DigiPath Technology Company

USA . 1,819 parts In-Stock

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IDEA Electronic Components Group

UK . 846 parts In-Stock

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Overview

Elevate your projects with the STTA2006PIRG by STMicroelectronics, boasting exceptional quality and reliability. As part of the TURBOSWITCH™ series, this versatile diode ensures swift performance while handling high voltages up to 600V and currents of 20A. Ideal for various applications, from power supplies to motor drives, it guarantees robust operation even in demanding conditions. Trust in STMicroelectronics' legacy of excellence and enjoy enhanced efficiency and durability in your designs!

Feature Benefit Bullets

Other Names: 497-3534, 497-3534-NDR

The availability of alternative names enhances compatibility and ease of identification in various applications.

Standard Package: 300

A standard package size of 300 allows for efficient bulk purchasing and inventory management, making it cost-effective for manufacturers.

Category: Discrete Semiconductor Products, Diodes, Rectifiers, Single Diodes, Series TURBOSWITCH™

Belonging to a recognized series ensures quality and reliability, underpinning its effectiveness in various rectification applications.

Packaging: Bulk

Bulk packaging reduces waste and increases convenience for users who require multiple components for their projects.

Technology: Standard

Standard technology makes the diode widely applicable, ensuring that it can be used in typical electronic circuit configurations.

Voltage - DC Reverse (Vr) (Max): 600 V

A high reverse voltage rating makes this product suitable for demanding applications, enhancing safety and performance.

Current - Average Rectified (Io): 20A

An average rectified current of 20A enables the diode to handle substantial loads, making it versatile for various use cases.

Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A

A low forward voltage drop of 1.75V minimizes power loss and increases efficiency, leading to better overall performance in circuits.

Speed: Fast Recovery =< 500ns, > 200mA (Io)

Fast recovery speed is ideal for high-frequency applications, ensuring reliable operation in switching scenarios.

Reverse Recovery Time (trr): 60 ns

A short reverse recovery time of 60ns contributes to improved switching performance, reducing losses in dynamic applications.

Current - Reverse Leakage @ Vr: 100 µA @ 600 V

Low reverse leakage current enhances efficiency and reduces heat generation, making the diode safer and more reliable.

Mounting Type: Through Hole

Through-hole mounting provides robust physical connections, suitable for a wide range of PCB designs and repairability.

Package / Case: DOP3I-2 Insulated (Straight Leads)

The DOP3I-2 package allows for flexible design options in circuit layouts, accommodating various space constraints.

Supplier Device Package: DOP3I

The DOP3I designation signifies a common and widely used package type, facilitating easy sourcing and replacement.

Operating Temperature - Junction: 150 °C (Max)

A maximum junction temperature of 150 °C ensures that the diode operates reliably in high-temperature environments.

Base Product Number: STTA200

The established base product number indicates that it is part of a recognized line of devices, ensuring trusted performance and support.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

An MSL of 1 means that this product can be handled without special precautions regarding humidity, simplifying assembly processes.

Technical Specifications

Additional Parts STTA2006PIRG attributes and parameters. Explore more Additional Parts devices from STMicroelectronics

Technical Specifications

Other Names:

497-3534
497-3534-NDR

Speed:

Fast Recovery =< 500ns, > 200mA (Io)

Category:

Discrete Semiconductor Products
Diodes Rectifiers Single Diodes

Reverse Recovery Time (trr):

60 ns

Mounting Type:

Through Hole

Supplier Device Package:

DOP3I

Standard Package:

300

Current - Reverse Leakage @ Vr:

100 µA @ 600 V

Series:

TURBOSWITCH™

Package / Case:

DOP3I-2 Insulated (Straight Leads)

Technology:

Standard

Voltage - Forward (Vf) (Max) @ If:

1.75 V @ 20 A

Packaging:

Bulk

Voltage - DC Reverse (Vr) (Max):

600 V

Current - Average Rectified (Io):

20A

Operating Temperature - Junction:

150°C (Max)

Base Product Number:

STTA200

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

STTA2006PIRG Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0080

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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