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STPSC806G-TR

STMicroelectronics

STPSC806G-TR by STMicroelectronics

STPSC806G-TR by STMicroelectronics is a Schottky rectifier diode with 600V reverse voltage, 8A output current, and 1.7V forward voltage. It is ideal for power applications operating at up to 175°C, featuring a small outline package style for surface mount assembly.

Median Price

$3.300

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.620

100+ parts

-

1k+ parts

-

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10

$2.620

-

-

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Digiode

USA . 4,084 parts In-Stock

1+ parts

$3.980

100+ parts

-

1k+ parts

-

10k+ parts

-

4,084

$3.980

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-

-

Vyrian

USA . 7,635 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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7,635

-

-

-

-

Anansix

USA . 733 parts In-Stock

1+ parts

-

100+ parts

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733

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,996 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

$0.141

10k+ parts

-

1,996

$0.156

-

$0.141

-

Aztec Data Supply Inc.

USA . 255 parts In-Stock

1+ parts

$0.170

100+ parts

-

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255

$0.170

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-

-

MKK Technologies

India . 2,341 parts In-Stock

1+ parts

$0.294

100+ parts

-

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-

2,341

$0.294

-

-

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DigiPath Technology Company

USA . 2,341 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

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2,341

$0.294

-

-

-

Corohmni

South Africa . 327 parts In-Stock

1+ parts

$2.430

100+ parts

-

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327

$2.430

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Argo Parts USA

USA . 3,084 parts In-Stock

1+ parts

$2.620

100+ parts

-

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3,084

$2.620

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Continental Prestige Electronics

USA . 2,603 parts In-Stock

1+ parts

$2.620

100+ parts

-

1k+ parts

-

10k+ parts

$2.568

2,603

$2.620

-

-

$2.568

Netroflash

USA . 500 parts In-Stock

1+ parts

$2.620

100+ parts

-

1k+ parts

$2.489

10k+ parts

$2.437

500

$2.620

-

$2.489

$2.437

Ampacity Inc.

Singapore . 18 parts In-Stock

1+ parts

$3.560

100+ parts

-

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18

$3.560

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-

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Semicontronic

India . 18 parts In-Stock

1+ parts

$3.560

100+ parts

$3.471

1k+ parts

$3.453

10k+ parts

-

18

$3.560

$3.471

$3.453

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Corphita

USA . 4,279 parts In-Stock

1+ parts

$3.771

100+ parts

-

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4,279

$3.771

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AZTECH Wire

Italy . 287 parts In-Stock

1+ parts

$7.375

100+ parts

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287

$7.375

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Perfect Parts

USA . 8,720 parts In-Stock

1+ parts

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8,720

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Parana Technologies

USA . 128 parts In-Stock

1+ parts

-

100+ parts

$0.187

1k+ parts

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10k+ parts

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128

-

$0.187

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-

Overview

Discover the power of the STPSC806G-TR by STMicroelectronics, a top-of-the-line rectifier diode that offers unparalleled quality and reliability. Manufactured by industry leader STMicroelectronics, this diode is perfect for power applications with its impressive 8A maximum output current and 600V maximum repetitive peak reverse voltage. With a Schottky technology and silicon carbide element material, this diode ensures optimal performance and efficiency. Say goodbye to worries about overheating, as it boasts a maximum operating temperature of 175°C. Trust STMicroelectronics to deliver cutting-edge solutions for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Application: POWER

Designed for power applications, ensuring reliable performance under high current conditions.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising functionality, ideal for demanding environments.

Diode Type: RECTIFIER DIODE

A rectifier diode ensures efficient conversion of AC to DC, making it suitable for power supply applications.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching speed, improving overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 600 V

Can handle high reverse voltages, making it suitable for power supply and rectification applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide diodes provide high temperature resistance and reliability, ideal for demanding applications.

Technical Specifications

Diodes & Rectifiers STPSC806G-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

24 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPSC806G-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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