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STPS30H60CG

STMicroelectronics

STPS30H60CG by STMicroelectronics

STPS30H60CG by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.47V, supports up to 15A output current, and has a peak reverse voltage of 60V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,719 parts In-Stock

1+ parts

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2,719

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Digiode

USA . 1,940 parts In-Stock

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1,940

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Anansix

USA . 316 parts In-Stock

1+ parts

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316

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,619 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

$0.138

10k+ parts

-

1,619

$0.154

-

$0.138

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MKK Technologies

India . 1,066 parts In-Stock

1+ parts

$0.289

100+ parts

-

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1,066

$0.289

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DigiPath Technology Company

USA . 1,066 parts In-Stock

1+ parts

$0.289

100+ parts

-

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10k+ parts

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1,066

$0.289

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AZTECH Wire

Italy . 668 parts In-Stock

1+ parts

$17.500

100+ parts

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668

$17.500

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Component Stockers USA

USA . 736 parts In-Stock

1+ parts

$99.990

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736

$99.990

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Parana Technologies

USA . 1,868 parts In-Stock

1+ parts

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100+ parts

$0.184

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1,868

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$0.184

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Corphita

USA . 1,311 parts In-Stock

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1,311

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Overview

Experience unparalleled reliability with the STPS30H60CG from STMicroelectronics, a leader in semiconductor innovation. This high-performance Schottky rectifier is designed for power applications, delivering efficiency and durability in a compact surface mount package. Its low forward voltage drop minimizes energy loss while supporting impressive current levels, making it ideal for demanding industrial and consumer electronics. Trust STMicroelectronics for quality that drives your projects to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making it suitable for diverse applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with two elements allows for efficient use in power applications and simplifies circuit design.

Surface Mount: YES

Being a surface mount device, it is ideal for compact circuit designs and helps save space on PCBs.

Package Shape: RECTANGULAR

The rectangular package shape aids in straightforward placement on motherboard layouts and improves thermal conductivity.

No. of Terminals: 2

With only two terminals, this diode simplifies connections, reducing complexity in circuit assemblies.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides a footprint that is conducive for high-density mounting and efficient use of board space.

Application: POWER

Designed specifically for power applications, this diode exhibits high efficiency and reliability under load.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and provides good corrosion resistance.

Terminal Position: SINGLE

With a single terminal position, it promotes ease of soldering and helps reduce manufacturing errors.

Case Connection: CATHODE

The cathode case connection ensures a consistent current direction, which is vital for rectification processes.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed to convert AC to DC efficiently, making it a key component in power supply circuits.

Maximum Forward Voltage (VF): 0.47 V

A low maximum forward voltage drop allows for higher efficiency and reduced heat generation during operation.

Maximum Output Current: 15 A

The ability to handle up to 15 A makes this diode suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage, enhancing overall performance in power circuits.

Terminal Form: GULL WING

The gull wing terminal form supports robust mechanical connections and facilitates better heat dissipation.

No. of Elements: 2

With two elements, it allows for redundancy and improved reliability in critical applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

A high maximum repetitive peak reverse voltage rating enables it to withstand various voltage spikes, protecting the circuit.

Maximum Non Repetitive Peak Forward Current: 230 A

This diode can handle sudden current surges up to 230 A, making it suitable for dynamic load conditions.

Diode Element Material: SILICON

Silicon as the diode element material ensures stable performance and reliability in various temperature ranges.

Technical Specifications

Diodes & Rectifiers STPS30H60CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE RATED

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.47 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

230 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS30H60CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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