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STPS2H100AFN

STMicroelectronics

STPS2H100AFN by STMicroelectronics

STMicroelectronics STPS2H100AFN is a Schottky rectifier diode with 100V reverse test voltage and 2A max output current. Ideal for power applications, it operates at up to 175°C, has a low 0.88V forward voltage, and UL recognized.

Median Price

$0.207

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

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$0.207

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150

$0.207

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Vyrian

USA . 6,712 parts In-Stock

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6,712

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Digiode

USA . 2,074 parts In-Stock

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2,074

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Anansix

USA . 256 parts In-Stock

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256

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Distributors (Availability)

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Semicontronic

India . 1,116 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

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$0.010

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-

1,116

$0.010

$0.010

$0.010

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IDEA Electronic Components Group

UK . 1,083 parts In-Stock

1+ parts

$0.026

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$0.023

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1,083

$0.026

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$0.023

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MKK Technologies

India . 1,279 parts In-Stock

1+ parts

$0.048

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1,279

$0.048

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DigiPath Technology Company

USA . 1,279 parts In-Stock

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$0.048

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-

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1,279

$0.048

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Aztec Data Supply Inc.

USA . 2,784 parts In-Stock

1+ parts

$0.070

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2,784

$0.070

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.095

100+ parts

$0.090

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$0.090

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350

$0.095

$0.090

$0.090

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Corohmni

South Africa . 135 parts In-Stock

1+ parts

$0.186

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135

$0.186

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Argo Parts USA

USA . 2,897 parts In-Stock

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$0.207

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$0.201

2,897

$0.207

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$0.201

Continental Prestige Electronics

USA . 1,754 parts In-Stock

1+ parts

$0.207

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$0.203

1,754

$0.207

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$0.203

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.207

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500

$0.207

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Ampacity Inc.

Singapore . 333 parts In-Stock

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$2.010

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333

$2.010

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AZTECH Wire

Italy . 656 parts In-Stock

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$11.545

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656

$11.545

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QUARKTWIN TECHNOLOGY LTD

USA . 22,336 parts In-Stock

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Lixinc

USA . 14,308 parts In-Stock

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Robosynatics

Brazil . 3,000 parts In-Stock

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Lucentia Tech

USA . 3,000 parts In-Stock

1+ parts

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$0.204

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$0.204

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$0.204

3,000

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$0.204

$0.204

$0.204

Corphita

USA . 2,940 parts In-Stock

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2,940

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Alle Elektronik GmbH

Germany . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 809 parts In-Stock

1+ parts

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$0.031

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809

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$0.031

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Overview

Discover the STPS2H100AFN by STMicroelectronics, a high-quality rectifier diode designed for power applications. Manufactured by industry leader STMicroelectronics, this SCHOTTKY technology diode offers a maximum output current of 2A and a reverse test voltage of 100V. With a package style of small outline and UL recognized reference standard, this diode is perfect for a variety of power applications. Trust in the reliability and efficiency of STMicroelectronics products and experience the value and benefits that the STPS2H100AFN can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the setup and installation process, allowing for easy integration into electronic circuits.

Surface Mount: YES

The surface mount capability enables efficient PCB assembly and space-saving design in electronic devices.

Maximum Reverse Current: 1 uA

With low reverse current, this diode ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

The rectangular shape offers versatility in placement and mounting options for the diode.

Reverse Test Voltage: 100 V

This high reverse test voltage rating provides protection against voltage spikes and overloads in power applications.

No. of Terminals: 2

The two terminals simplify the connection process and enhance the stability of the diode in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact design in electronic equipment.

Application: POWER

Designed for power applications, this diode is suitable for use in various power supply and conversion systems.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this diode can withstand heat and maintain stable performance in diverse environments.

Terminal Position: DUAL

The dual terminal position ensures secure connections and enhances the stability of the diode in the circuit.

Reference Standard: UL RECOGNIZED

UL recognition demonstrates the compliance and safety standards met by this diode, making it a reliable choice for electronic devices.

Diode Type: RECTIFIER DIODE

This rectifier diode is designed for converting AC to DC power efficiently in electronic circuits.

Maximum Forward Voltage (VF): 0.88 V

The low forward voltage drop of 0.88V ensures minimal power loss and high efficiency in power conversion applications.

Maximum Output Current: 2 A

With a maximum output current of 2A, this diode is capable of handling moderate power loads in electronic circuits.

Technology: SCHOTTKY

The Schottky technology in this diode provides fast switching speeds and low power consumption in high-frequency applications.

Terminal Form: FLAT

The flat terminal form allows for easy soldering and secure connections in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 100 V

This high peak reverse voltage rating offers protection against reverse voltage spikes and ensures the reliability of the diode in power applications.

Maximum Non Repetitive Peak Forward Current: 75 A

The high non-repetitive peak forward current rating of 75A allows the diode to handle surges and peak currents effectively.

Diode Element Material: SILICON

The silicon diode element material provides stability, efficiency, and reliability in power conversion and rectification processes.

Technical Specifications

Diodes & Rectifiers STPS2H100AFN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.88 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS2H100AFN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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