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STPS20SM60CG-TR

STMicroelectronics

STPS20SM60CG-TR by STMicroelectronics

STMicroelectronics' STPS20SM60CG-TR is a Schottky rectifier diode with 2 elements, common cathode config, and max output current of 10A. Ideal for efficiency applications, it has a max repetitive peak reverse voltage of 60V and forward voltage of 0.645V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,430 parts In-Stock

1+ parts

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10,430

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Digiode

USA . 3,545 parts In-Stock

1+ parts

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3,545

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Anansix

USA . 2,638 parts In-Stock

1+ parts

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2,638

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.065

100+ parts

$0.059

1k+ parts

$0.053

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-

350

$0.065

$0.059

$0.053

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IDEA Electronic Components Group

UK . 820 parts In-Stock

1+ parts

$0.160

100+ parts

-

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$0.144

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820

$0.160

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$0.144

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MKK Technologies

India . 1,123 parts In-Stock

1+ parts

$0.301

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1,123

$0.301

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DigiPath Technology Company

USA . 1,123 parts In-Stock

1+ parts

$0.301

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1,123

$0.301

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AZTECH Wire

Italy . 898 parts In-Stock

1+ parts

$22.240

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898

$22.240

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Component Stockers USA

USA . 296 parts In-Stock

1+ parts

$99.990

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296

$99.990

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Corphita

USA . 3,408 parts In-Stock

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3,408

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Parana Technologies

USA . 1,304 parts In-Stock

1+ parts

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$0.191

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1,304

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$0.191

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Overview

Discover the STPS20SM60CG-TR by STMicroelectronics, a top-quality diode & rectifier designed for efficiency applications. With a common cathode configuration and Schottky technology, this product offers a maximum output current of 10A and a maximum repetitive peak reverse voltage of 60V. Its small outline package style and matte tin terminal finish make it ideal for surface mount applications. Trust in STMicroelectronics' reputation for excellence and innovation to bring you reliable solutions that deliver value and performance. Upgrade your designs with the STPS20SM60CG-TR and experience the benefits of cutting-edge technology in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good protection and durability for the diodes, making them suitable for a range of applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration simplifies circuit design and allows for easy integration into existing systems. Having 2 elements provides redundancy and reliability.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 40 uA

Low reverse current ensures minimal power loss and high efficiency in operation.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving installation in electronic devices or systems.

No. of Terminals: 2

Having only 2 terminals simplifies installation and connection in circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for higher component density.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where power efficiency is crucial, such as in power supplies or converters.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures proper polarity during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes the risk of component damage during soldering processes.

Peak Reflow Temperature °C: 245

Peak reflow temperature tolerance makes the diode suitable for high-temperature soldering processes.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting alternating current (AC) to direct current (DC) efficiently and reliably.

Maximum Forward Voltage (VF): 0.645 V

Low forward voltage drop results in minimal power loss and high efficiency during operation.

Maximum Output Current: 10 A

High output current capability makes the diode suitable for applications requiring significant power handling.

Technology: SCHOTTKY

Schottky diode technology offers lower forward voltage drop and faster switching speeds compared to standard silicon diodes.

Terminal Form: GULL WING

Gull wing terminal form allows for efficient surface mount soldering and reliable electrical connections.

No. of Elements: 2

Having 2 elements provides redundancy and increases reliability in circuit operation.

Maximum Repetitive Peak Reverse Voltage: 60 V

High reverse voltage tolerance makes the diode suitable for applications with varying voltage requirements.

Maximum Non Repetitive Peak Forward Current: 220 A

High peak forward current capability ensures the diode can handle transient current spikes without damage.

Diode Element Material: SILICON

Silicon diode element material provides good performance and reliability in a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers STPS20SM60CG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.645 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

40 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS20SM60CG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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