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STPS15SM80CT

STMicroelectronics

STPS15SM80CT by STMicroelectronics

STMicroelectronics STPS15SM80CT is a Schottky rectifier diode with 80V reverse voltage, 7.5A output current, and 0.52V forward voltage. Common cathode configuration with matte tin finish for efficiency applications in through-hole mounting.

Median Price

$1.022

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,000 parts In-Stock

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$0.724

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$0.724

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Chip1Stop

Japan . 1,998 parts In-Stock

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$1.320

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$1.320

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Verical

USA . 1,000 parts In-Stock

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Digiode

USA . 1,698 parts In-Stock

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$0.680

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Vyrian

USA . 2,978 parts In-Stock

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Anansix

USA . 1,272 parts In-Stock

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R&J Components

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IDEA Electronic Components Group

UK . 247 parts In-Stock

1+ parts

$0.136

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$0.123

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247

$0.136

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.143

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$0.130

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$0.117

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350

$0.143

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$0.117

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MKK Technologies

India . 19 parts In-Stock

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$0.256

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$0.256

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DigiPath Technology Company

USA . 19 parts In-Stock

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$0.256

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Corphita

USA . 3,320 parts In-Stock

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$0.644

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$0.644

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AZTECH Wire

Italy . 262 parts In-Stock

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$17.050

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Perfect Parts

USA . 3,733 parts In-Stock

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Assy Fe

Spain . 2,000 parts In-Stock

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Parana Technologies

USA . 139 parts In-Stock

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Overview

Unlock a new level of efficiency with the STPS15SM80CT by STMicroelectronics. This top-quality diode rectifier boasts cutting-edge technology and superior craftsmanship, ensuring reliable performance in a wide range of applications. With a maximum output current of 7.5 A and a maximum repetitive peak reverse voltage of 80 V, this product delivers exceptional value and benefits to customers looking to optimize their systems for maximum efficiency. Upgrade to the STPS15SM80CT today and experience the difference that quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a durable and lightweight construction for the diode, making it suitable for a variety of applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easy integration into circuits, and having 2 elements provides redundancy and reliability.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and fit into compact spaces in electronic devices.

No. of Terminals: 3

Having 3 terminals allows for versatile connection options and flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount style simplifies installation and maintenance of the diode in various equipment.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where energy conservation is important.

Terminal Finish: MATTE TIN

The matte tin finish ensures good conductivity and corrosion resistance for reliable performance.

Terminal Position: SINGLE

A single terminal position simplifies installation and reduces the risk of connection errors.

Case Connection: CATHODE

The cathode case connection enhances circuit stability and facilitates proper polarity alignment.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC, making it suitable for various power supply applications.

Maximum Forward Voltage (VF): 0.52 V

The low forward voltage drop of 0.52V minimizes power loss and improves overall efficiency of the diode.

Maximum Output Current: 7.5 A

With a high output current capacity of 7.5A, this diode can handle heavy loads and ensure stable operation in demanding applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low reverse leakage for improved performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies soldering and ensures secure connections in circuit boards.

No. of Elements: 2

Having 2 elements provides redundancy and reliability in case one element fails, ensuring continuous operation.

Maximum Repetitive Peak Reverse Voltage: 80 V

The high maximum repetitive peak reverse voltage of 80V makes this diode suitable for applications with varying voltage levels.

Maximum Non Repetitive Peak Forward Current: 150 A

With a maximum non-repetitive peak forward current of 150A, this diode can withstand short-term surges in current without damage.

Diode Element Material: SILICON

Silicon diode elements offer high reliability, temperature stability, and low leakage current for consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers STPS15SM80CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.52 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS15SM80CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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