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STPR120A

STMicroelectronics

STPR120A by STMicroelectronics

STMicroelectronics' STPR120A is a single rectifier diode with max. reverse recovery time of 0.035 us and max. forward voltage of 0.9 V. It operates at up to 150 °C, suitable for applications requiring high peak repetitive reverse voltage up to 200 V and non-repetitive forward current up to 60 A in a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Sensible Micro Corp

USA . 26,360 parts In-Stock

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ComSIT Distribution GmbH

Germany . 7,515 parts In-Stock

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7,515

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Vyrian

USA . 5,779 parts In-Stock

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5,779

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Corel Iberica Componentes, S.L.

Spain . 5,000 parts In-Stock

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5,000

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R&J Components

USA . 4,492 parts In-Stock

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4,492

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Anansix

USA . 2,211 parts In-Stock

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Digiode

USA . 1,750 parts In-Stock

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1,750

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LIBRA Elektronik GmbH

Germany . 783 parts In-Stock

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PC Components Company LLC

USA . 686 parts In-Stock

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Bristol Electronics

USA . 186 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 129 parts In-Stock

1+ parts

$0.109

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$0.099

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129

$0.109

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$0.099

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MKK Technologies

India . 1,781 parts In-Stock

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$0.206

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$0.206

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DigiPath Technology Company

USA . 1,781 parts In-Stock

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$0.206

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$0.206

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AZTECH Wire

Italy . 51 parts In-Stock

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$12.780

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 20,000 parts In-Stock

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 5,738 parts In-Stock

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Parana Technologies

USA . 2,251 parts In-Stock

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$0.131

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Corphita

USA . 2,103 parts In-Stock

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Assy Fe

Spain . 2,100 parts In-Stock

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Perfect Parts

USA . 7 parts In-Stock

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Overview

Discover the STPR120A by STMicroelectronics, a high-quality rectifier diode designed to meet your needs. With a peak repetitive peak reverse voltage of 200V and a maximum output current of 1A, this diode offers reliability and efficiency in various applications. Whether you're working on power supplies, automotive systems, or industrial equipment, the STPR120A delivers excellent performance. Trust in STMicroelectronics' reputation for excellence and elevate your projects with the value and benefits that this diode provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration of the diode.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time helps in reducing switching losses and improving overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and space-saving design for the diode.

No. of Terminals: 2

Having 2 terminals simplifies the connectivity and usage of the diode in circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and makes the diode suitable for compact designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to withstand harsh environments and extended use.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for easy installation of the diode.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connection options.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering of the diode during assembly process.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it allows for efficient conversion of AC to DC currents in various electronic applications.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop of 0.9V ensures minimal power loss during forward conduction.

Maximum Output Current: 1 A

With a maximum output current of 1A, this diode can handle moderate current loads in circuits.

Terminal Form: C BEND

C bend terminal form provides secure connection and stability in circuit applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage rating of 200V ensures protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 60 A

Capable of handling high non-repetitive peak forward current of 60A for short durations.

Diode Element Material: SILICON

Silicon as the diode element material provides reliable and consistent performance over a wide range of temperatures and operating conditions.

Technical Specifications

Diodes & Rectifiers STPR120A attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPR120A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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