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STPR1020CG

STMicroelectronics

STPR1020CG by STMicroelectronics

STMicroelectronics' STPR1020CG is a common cathode diode with ultra-fast recovery time of 0.03 us, ideal for applications requiring high-speed rectification. With a max output current of 5A and max repetitive peak reverse voltage of 200V, it is suitable for circuits demanding efficient power management in compact spaces. The diode's small outline package style and gull wing terminal form make it convenient for surface mount installations in electronic devices.

Median Price

$0.650

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 50 parts In-Stock

1+ parts

$0.650

100+ parts

-

1k+ parts

-

10k+ parts

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50

$0.650

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-

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DF Sales Co.

USA . 50 parts In-Stock

1+ parts

$0.650

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.650

-

-

-

Anansix

USA . 1,290 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,290

-

-

-

-

ECAB

Sweden . 976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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976

-

-

-

-

Vyrian

USA . 465 parts In-Stock

1+ parts

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100+ parts

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465

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Digiode

USA . 316 parts In-Stock

1+ parts

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316

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 525 parts In-Stock

1+ parts

$0.122

100+ parts

-

1k+ parts

$0.110

10k+ parts

-

525

$0.122

-

$0.110

-

MKK Technologies

India . 438 parts In-Stock

1+ parts

$0.230

100+ parts

-

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438

$0.230

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-

-

DigiPath Technology Company

USA . 438 parts In-Stock

1+ parts

$0.230

100+ parts

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438

$0.230

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Parana Technologies

USA . 1,440 parts In-Stock

1+ parts

-

100+ parts

$0.146

1k+ parts

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1,440

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$0.146

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Corphita

USA . 1,197 parts In-Stock

1+ parts

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1,197

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Overview

Discover the STPR1020CG by STMicroelectronics, a high-quality diode rectifier that offers ultra-fast recovery and a maximum output current of 5A. With a common cathode configuration and two elements, this product is perfect for a wide range of applications. Manufactured by STMicroelectronics, a trusted name in the industry, this diode rectifier provides customers with reliable performance and excellent value. Upgrade your electronic projects with the STPR1020CG and experience the benefits of its superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for easy integration into circuit designs, providing versatility and flexibility.

Surface Mount: YES

Being surface mountable, these diodes can be easily mounted on PCBs, saving space and enabling efficient assembly processes.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time of 0.03 us ensures efficient switching performance, making these diodes suitable for high-speed applications.

Package Shape: RECTANGULAR

The rectangular package shape offers a standardized form factor for easy handling and mounting in various electronic devices.

No. of Terminals: 2

With only 2 terminals, these diodes are simple to connect and integrate into circuitry, reducing complexity and potential points of failure.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making these diodes ideal for compact electronic designs.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery applications, these diodes offer high efficiency and reliability in demanding electronic systems.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, these diodes can withstand elevated temperatures, ensuring stable performance in harsh environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, enhancing the overall reliability of the diodes.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures consistent polarity in circuit connections.

Case Connection: CATHODE

The cathode case connection simplifies the circuit design and ensures proper polarity, making these diodes easy to use for various applications.

Diode Type: RECTIFIER DIODE

As rectifier diodes, these components are ideal for converting AC to DC currents and providing power regulation in electronic circuits.

Maximum Forward Voltage (VF): 1.25 V

The low forward voltage drop of 1.25 V minimizes power loss and heat generation, increasing the efficiency of the diodes in electronic systems.

Maximum Output Current: 5 A

With a maximum output current of 5 A, these diodes can handle high current loads, making them suitable for power supply and energy management applications.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering, ensuring secure connections in circuit assemblies.

No. of Elements: 2

Having 2 diode elements allows for increased current handling capacity and redundancy, enhancing the reliability of the diodes.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high repetitive peak reverse voltage rating of 200 V ensures the diodes can handle reverse voltage spikes and surges in the circuit.

Maximum Non Repetitive Peak Forward Current: 50 A

The high non-repetitive peak forward current rating of 50 A allows the diodes to withstand short-duration high-current pulses without damage.

Diode Element Material: SILICON

Being made of silicon, these diodes offer reliable performance, high efficiency, and good temperature stability, making them suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPR1020CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPR1020CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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