Loading...

STD30NF03L

STMicroelectronics

STD30NF03L by STMicroelectronics

STD30NF03L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact designs with its surface mount configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,573

-

-

-

-

Anansix

USA . 1,357 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,357

-

-

-

-

Digiode

USA . 444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

444

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,182 parts In-Stock

1+ parts

$1.645

100+ parts

-

1k+ parts

$1.480

10k+ parts

-

1,182

$1.645

-

$1.480

-

MKK Technologies

India . 1,255 parts In-Stock

1+ parts

$3.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,255

$3.093

-

-

-

DigiPath Technology Company

USA . 1,255 parts In-Stock

1+ parts

$3.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,255

$3.093

-

-

-

RC Electronics

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45,000

-

-

-

-

Kepictronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Parana Technologies

USA . 2,280 parts In-Stock

1+ parts

-

100+ parts

$1.967

1k+ parts

-

10k+ parts

-

2,280

-

$1.967

-

-

Corphita

USA . 409 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

409

-

-

-

-

Overview

Unlock the power of efficiency with the STD30NF03L from STMicroelectronics, a trusted name in innovative semiconductor solutions. This N-channel power FET delivers exceptional performance for a wide range of applications, from industrial controls to automotive systems. With its robust design and built-in diode, it ensures reliable operation while maximizing energy savings. Choose STMicroelectronics for superior quality and unmatched reliability—your projects deserve the best!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this FET suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration provides better electron mobility, resulting in enhanced performance and efficiency for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode improves the design simplicity and reliability, particularly in applications requiring freewheeling diodes.

Transistor Application: SWITCHING

Designed explicitly for switching applications, this FET offers fast switching speeds, making it ideal for power management and control.

Surface Mount: YES

Surface mount technology enables compact designs and easier integration into modern circuit boards, enhancing production efficiency.

Minimum DS Breakdown Voltage: 30 V

With a minimum 30V breakdown voltage, this FET can handle robust applications without the risk of breakdown under normal conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on circuit boards, making it suitable for high-density applications.

Terminal Form: GULL WING

The gull wing terminal form enhances soldering reliability and provides a stable connection to the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for better control and reduced power loss during operation, which is crucial for efficient circuit design.

Maximum Pulsed Drain Current (IDM): 120 A

This high pulsed drain current capacity allows the FET to handle brief surges in current without damage, making it adaptable to demanding applications.

Avalanche Energy Rating (EAS): 100 mJ

With an avalanche energy rating of 100 mJ, the FET reliably handles transient voltage spikes, enhancing the robustness of circuit designs.

Maximum Drain Current (Abs) (ID): 30 A

The 30A maximum drain current provides substantial current handling capability, suitable for high-power applications.

No. of Terminals: 2

Fewer terminals simplify integration and can reduce assembly costs, making this FET efficient for straightforward circuit designs.

Maximum Power Dissipation (Abs): 40 W

A maximum power dissipation of 40W allows the FET to handle significant power without overheating, enhancing reliability in applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports space-saving designs, catering to compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology promises high efficiency, fast switching, and excellent thermal stability, making this product versatile for various applications.

Maximum Operating Temperature: 175 °C

Operating at a maximum of 175 °C ensures reliability in high-temperature environments, making this FET suitable for robust applications.

Transistor Element Material: SILICON

Silicon as the element material ensures good electrical properties and has wide industry acceptance for reliable performance.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and corrosion resistance, ensuring long-term reliability and ease of handling.

Maximum Drain Current (ID): 30 A

This specification confirms the FET's ability to handle consistent currents, ideal for power supply and motor control applications.

Maximum Drain-Source On Resistance: 0.035 ohm

A low on-resistance of 0.035 ohm minimizes power loss during operation, enhancing overall efficiency in electronic circuits.

Terminal Position: SINGLE

The single terminal position simplifies layout and improves design flexibility in compact systems.

Case Connection: DRAIN

DRAIN case connection ensures a straightforward and reliable connection in circuit designs, aiding performance consistency.

Technical Specifications

Power Field Effect Transistors (FET) STD30NF03L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

LOW THRESHOLD

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

30 A

Maximum Drain Current (ID):

30 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

120 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD30NF03L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19