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STBR3012WY

STMicroelectronics

STBR3012WY by STMicroelectronics

STBR3012WY by STMicroelectronics is a high-voltage rectifier diode designed for demanding applications. It features a max repetitive peak reverse voltage of 1200 V, operates b/w -40 °C to 175 °C, and supports up to 300 A forward current. Ideal for automotive and industrial uses, it meets AEC-Q101 standards.

Median Price

$3.300

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,219 parts In-Stock

1+ parts

$3.300

100+ parts

$1.250

1k+ parts

$1.137

10k+ parts

$1.041

1,219

$3.300

$1.250

$1.137

$1.041

Mouser Electronics

USA . 483 parts In-Stock

1+ parts

$3.310

100+ parts

$1.190

1k+ parts

-

10k+ parts

-

483

$3.310

$1.190

-

-

Avnet

USA . 1,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,080

-

-

-

-

Rochester

USA . 120 parts In-Stock

1+ parts

-

100+ parts

$1.290

1k+ parts

$1.160

10k+ parts

$1.090

120

-

$1.290

$1.160

$1.090

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 877 parts In-Stock

1+ parts

$3.572

100+ parts

-

1k+ parts

-

10k+ parts

-

877

$3.572

-

-

-

Vyrian

USA . 5,851 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,851

-

-

-

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Anansix

USA . 601 parts In-Stock

1+ parts

-

100+ parts

-

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601

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 765 parts In-Stock

1+ parts

$0.017

100+ parts

-

1k+ parts

$0.016

10k+ parts

-

765

$0.017

-

$0.016

-

MKK Technologies

India . 658 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

10k+ parts

-

658

$0.033

-

-

-

DigiPath Technology Company

USA . 658 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

10k+ parts

-

658

$0.033

-

-

-

Corphita

USA . 1,279 parts In-Stock

1+ parts

$3.384

100+ parts

-

1k+ parts

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10k+ parts

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1,279

$3.384

-

-

-

Microchip USA

USA . 4,111 parts In-Stock

1+ parts

$20.800

100+ parts

-

1k+ parts

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10k+ parts

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4,111

$20.800

-

-

-

A-Z Elektronik GmbH

Germany . 5,424 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,424

-

-

-

-

Parana Technologies

USA . 647 parts In-Stock

1+ parts

-

100+ parts

$0.021

1k+ parts

-

10k+ parts

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647

-

$0.021

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-

iodParts Technologies Inc.

India . 150 parts In-Stock

1+ parts

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100+ parts

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150

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Eastek

USA . 120 parts In-Stock

1+ parts

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120

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-

Overview

Elevate your designs with the STBR3012WY rectifier diode from STMicroelectronics, renowned for its reliability and performance in high-voltage applications. Engineered for excellence, this robust component operates seamlessly across extreme temperatures, ensuring durability where it matters most. Trust in ST's commitment to quality and innovation, and experience enhanced efficiency and longevity in your projects. Make a smart investment today that empowers your technological advancements!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures excellent durability and moisture resistance, making the diode suitable for a wide range of environments.

Config: SINGLE

A single configuration simplifies circuit design and integration, making this diode an easy choice for various high voltage applications.

Maximum Reverse Current: 2 uA

With a maximum reverse current of only 2 uA, this diode minimizes power loss and enhances efficiency in various electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space and easy mounting, ideal for compact circuit designs.

No. of Terminals: 2

Having two terminals simplifies connections and integration into circuit boards, facilitating ease of installation.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure attachment and support, ensuring stable operation in high-vibration environments.

Application: HIGH VOLTAGE

Designed specifically for high-voltage applications, this diode can handle extreme conditions, making it suitable for industrial and automotive uses.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature of 175 °C allows this diode to function in demanding thermal environments, improving reliability.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this diode is capable of functioning in extreme cold, enhancing versatility in different climates.

Terminal Position: SINGLE

A single terminal position simplifies the layout of the circuit board, making it easier to design and implement.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 certification ensures that this diode meets stringent automotive standards for quality and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), which is crucial for many electronic applications.

Maximum Forward Voltage (VF): 1.3 V

A low maximum forward voltage of 1.3 V ensures minimal power loss when the diode is conducting, improving overall circuit efficiency.

Maximum Repetitive Peak Reverse Voltage: 1200 V

With a peak reverse voltage of 1200 V, this diode is capable of withstanding high voltage surges, making it reliable for critical applications.

Maximum Non Repetitive Peak Forward Current: 300 A

The ability to handle a peak forward current of 300 A indicates that this diode can support heavy load applications, enhancing its utility in high-powered circuits.

Diode Element Material: SILICON

The use of silicon as the diode element material provides excellent electrical properties, contributing to higher efficiency and performance.

Technical Specifications

Diodes & Rectifiers STBR3012WY attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-247

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

2 uA

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STBR3012WY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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