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STBR3012G2-TR

STMicroelectronics

STBR3012G2-TR by STMicroelectronics

STBR3012G2-TR by STMicroelectronics is a single rectifier diode with 1200V reverse test voltage and 30A max output current. It is a surface-mount device in a small outline package, ideal for high-power applications requiring low forward voltage drop.

Median Price

$1.332

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$0.908

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-

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1

$0.908

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Chip1Stop

Japan . 1,685 parts In-Stock

1+ parts

$3.510

100+ parts

$1.470

1k+ parts

$1.300

10k+ parts

-

1,685

$3.510

$1.470

$1.300

-

Verical

USA . 1,850 parts In-Stock

1+ parts

-

100+ parts

$1.332

1k+ parts

$1.332

10k+ parts

$1.332

1,850

-

$1.332

$1.332

$1.332

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

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1,000

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Distributors (In-Stock)

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Digiode

USA . 1,893 parts In-Stock

1+ parts

$1.268

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-

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1,893

$1.268

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.563

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-

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500

$1.563

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Vyrian

USA . 3,048 parts In-Stock

1+ parts

-

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3,048

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Cyclops Electronics Ltd

UK . 1,000 parts In-Stock

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1,000

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Anansix

USA . 531 parts In-Stock

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531

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,881 parts In-Stock

1+ parts

$0.074

100+ parts

-

1k+ parts

$0.066

10k+ parts

-

1,881

$0.074

-

$0.066

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Corohmni

South Africa . 110 parts In-Stock

1+ parts

$0.095

100+ parts

-

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110

$0.095

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MKK Technologies

India . 718 parts In-Stock

1+ parts

$0.138

100+ parts

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718

$0.138

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DigiPath Technology Company

USA . 718 parts In-Stock

1+ parts

$0.138

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718

$0.138

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Aztec Data Supply Inc.

USA . 2,792 parts In-Stock

1+ parts

$0.154

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2,792

$0.154

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Ampacity Inc.

Singapore . 2,839 parts In-Stock

1+ parts

$1.070

100+ parts

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2,839

$1.070

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Semicontronic

India . 2,853 parts In-Stock

1+ parts

$1.130

100+ parts

$1.102

1k+ parts

$1.096

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-

2,853

$1.130

$1.102

$1.096

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Corphita

USA . 2,459 parts In-Stock

1+ parts

$1.202

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2,459

$1.202

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Argo Parts USA

USA . 2,369 parts In-Stock

1+ parts

$1.518

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2,369

$1.518

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Continental Prestige Electronics

USA . 247 parts In-Stock

1+ parts

$1.518

100+ parts

-

1k+ parts

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10k+ parts

$1.487

247

$1.518

-

-

$1.487

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.594

100+ parts

$1.594

1k+ parts

$1.594

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-

20

$1.594

$1.594

$1.594

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Microchip USA

USA . 4,025 parts In-Stock

1+ parts

$9.848

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4,025

$9.848

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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$1.825

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10,000

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$1.825

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Parana Technologies

USA . 1,332 parts In-Stock

1+ parts

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100+ parts

$0.088

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1,332

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$0.088

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GreenTree Electronics

Israel . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Discover the STBR3012G2-TR by STMicroelectronics, a top-quality rectifier diode that offers exceptional performance and reliability. Manufactured by a trusted industry leader, this diode is designed for a wide range of applications, delivering efficient power conversion with minimal reverse current. With a maximum reverse voltage of 1200V and a maximum output current of 30A, this diode provides superior functionality in a compact package. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs for high-performance diodes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diode, increasing its durability and reliability.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 2 uA

Low reverse current ensures minimal power loss and improves the efficiency of the diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures stable performance even in demanding environments.

Maximum Output Current: 30 A

High output current capability allows the diode to handle heavy loads without overheating or malfunctioning.

Diode Element Material: SILICON

Silicon is a commonly used diode material known for its stable and reliable performance, making this diode a dependable choice.

Technical Specifications

Diodes & Rectifiers STBR3012G2-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

2 uA

Reverse Test Voltage:

1200 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STBR3012G2-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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