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SPV1001D40TR

STMicroelectronics

SPV1001D40TR by STMicroelectronics

SPV1001D40TR by STMicroelectronics is a single rectifier diode with max output current of 16A and reverse current of 1uA. It operates b/w -40 to 175 °C, suitable for applications requiring high peak forward current up to 250A in surface mount packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,172 parts In-Stock

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8,172

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Digiode

USA . 1,708 parts In-Stock

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1,708

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Anansix

USA . 1,699 parts In-Stock

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1,699

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,023 parts In-Stock

1+ parts

$0.104

100+ parts

-

1k+ parts

$0.094

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1,023

$0.104

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$0.094

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MKK Technologies

India . 1,715 parts In-Stock

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$0.195

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1,715

$0.195

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DigiPath Technology Company

USA . 1,715 parts In-Stock

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$0.195

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1,715

$0.195

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AZTECH Wire

Italy . 322 parts In-Stock

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$11.290

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322

$11.290

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Corphita

USA . 2,276 parts In-Stock

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2,276

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Parana Technologies

USA . 1,311 parts In-Stock

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$0.124

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1,311

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$0.124

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Perfect Parts

USA . 988 parts In-Stock

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988

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Kepictronics

USA . 370 parts In-Stock

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370

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Overview

Designed by industry leader STMicroelectronics, the SPV1001D40TR is a top-of-the-line rectifier diode that offers exceptional quality and reliability. Ideal for a wide range of applications, this diode boasts a high maximum output current of 16 A, making it perfect for demanding projects. With a package style that is both compact and versatile, customers can trust in the performance and durability of this product. Experience the benefits of superior technology with the SPV1001D40TR, offering unmatched value and efficiency for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration makes it easy to integrate into circuits without complex setup requirements.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and improved efficiency.

Package Shape: RECTANGULAR

Rectangular shape is a common and versatile form factor for easy installation and handling.

No. of Terminals: 2

Having only 2 terminals simplifies connection and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in cold environments without performance degradation.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the risk of incorrect connections.

Case Connection: CATHODE

Cathode connection simplifies circuit design and ensures proper polarity during installation.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC, making it suitable for a wide range of applications.

Maximum Output Current: 16 A

High maximum output current allows for handling of larger loads and power requirements.

Terminal Form: GULL WING

Gull wing terminal form provides easy surface mount capability and improved soldering reliability.

Maximum Non Repetitive Peak Forward Current: 250 A

High peak forward current rating allows for handling of surge currents without damage to the diode.

Diode Element Material: SILICON

Silicon material ensures consistent and reliable performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers SPV1001D40TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SPV1001D40TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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