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SMC30J85A

STMicroelectronics

SMC30J85A by STMicroelectronics

SMC30J85A by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 95-105 V, and operates b/w -55 °C to 175 °C. Ideal for safeguarding sensitive components against voltage spikes, it meets IEC and MIL standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,487 parts In-Stock

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4,487

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Vyrian

USA . 4,037 parts In-Stock

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4,037

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Anansix

USA . 444 parts In-Stock

1+ parts

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444

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 797 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

$0.031

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797

$0.034

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$0.031

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MKK Technologies

India . 205 parts In-Stock

1+ parts

$0.064

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205

$0.064

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DigiPath Technology Company

USA . 205 parts In-Stock

1+ parts

$0.064

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205

$0.064

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AZTECH Wire

Italy . 634 parts In-Stock

1+ parts

$11.930

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634

$11.930

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Corphita

USA . 4,224 parts In-Stock

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4,224

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Parana Technologies

USA . 1,383 parts In-Stock

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$0.041

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1,383

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$0.041

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Overview

Elevate your designs with the SMC30J85A from STMicroelectronics, a leader in innovative electronic solutions. This robust transient suppression device offers unparalleled reliability and protection for sensitive components, ensuring peak performance even in extreme conditions. With its compact design and exceptional power dissipation capabilities, it's perfect for automotive, industrial, and consumer electronics applications. Trust STMicroelectronics to deliver quality and longevity that enhances your products' value and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides excellent insulation and durability, making it suitable for a variety of environmental conditions.

Config: SINGLE

A single configuration allows for easy integration into circuits while maintaining a compact design.

Surface Mount: YES

Surface mount technology enables efficient space utilization on printed circuit boards, making this device ideal for modern electronics.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

With high power dissipation capabilities, this device can effectively manage transient power spikes, protecting sensitive components.

Nominal Breakdown Voltage: 100 V

The nominal breakdown voltage offers reliable performance in transient voltage suppression scenarios within specified limits.

Maximum Reverse Current: 0.2 uA

The extremely low reverse current ensures minimal leakage, enhancing overall circuit efficiency and reliability.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient layout and placement on PCBs, improving manufacturing processes.

Reverse Test Voltage: 85 V

A lower reverse test voltage ensures that the device can function reliably without exceeding operational limits.

No. of Terminals: 2

The dual-terminal design facilitates easy connections and integration with existing circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for the placement of multiple components in tight spaces, enhancing design flexibility.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this device can withstand extreme conditions, making it suitable for harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliability in cold environments, expanding its application range.

Terminal Position: DUAL

The dual terminal positioning enhances ease of installation and configuration in various applications.

Minimum Breakdown Voltage: 95 V

The specified minimum breakdown voltage gives assurance of stability and predictable performance in transient suppression.

Maximum Breakdown Voltage: 105 V

With a precise breakdown voltage range, the device offers effective clamping while avoiding unnecessary activation.

Reference Standard: IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Compliance with these standards indicates high reliability and performance, promoting trust in its use for sensitive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This specific diode type is optimized for transient voltage suppression, making it essential for protecting electronic circuits.

Technology: AVALANCHE

Utilizing avalanche technology allows for rapid response to voltage transients, enhancing protection against damaging voltage spikes.

Terminal Form: C BEND

The C bend terminal form enables secure mounting and connection, improving mechanical stability on the PCB.

Maximum Repetitive Peak Reverse Voltage: 85 V

The specification of maximum repetitive peak reverse voltage supports varied applications while ensuring protection against repeated surges.

Polarity: UNIDIRECTIONAL

A unidirectional design simplifies circuit integration and ensures effective suppression of voltage in one direction.

Maximum Clamping Voltage: 137 V

The clamping voltage specification protects sensitive components by limiting the voltage during transient events.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical properties and reliability, establishing this device as a dependable choice.

Technical Specifications

Transient Suppression Devices SMC30J85A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

105 V

Minimum Breakdown Voltage:

95 V

Nominal Breakdown Voltage:

100 V

Maximum Clamping Voltage:

137 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

85 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SMC30J85A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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