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SMC30J70A

STMicroelectronics

SMC30J70A by STMicroelectronics

SMC30J70A by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 77.9-86.1 V, and operates b/w -55 °C to 175 °C. This device ensures reliable performance in various applications, adhering to IEC standards.

Median Price

$1.250

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 290 parts In-Stock

1+ parts

$1.250

100+ parts

$0.743

1k+ parts

$0.536

10k+ parts

$0.525

290

$1.250

$0.743

$0.536

$0.525

Mouser Electronics

USA . 282 parts In-Stock

1+ parts

$1.250

100+ parts

$0.743

1k+ parts

$0.536

10k+ parts

$0.434

282

$1.250

$0.743

$0.536

$0.434

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,535 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,535

-

-

-

-

Digiode

USA . 4,554 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,554

-

-

-

-

Anansix

USA . 1,782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,782

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,558 parts In-Stock

1+ parts

$0.144

100+ parts

-

1k+ parts

$0.130

10k+ parts

-

1,558

$0.144

-

$0.130

-

MKK Technologies

India . 750 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$0.272

-

-

-

DigiPath Technology Company

USA . 750 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$0.272

-

-

-

AZTECH Wire

Italy . 136 parts In-Stock

1+ parts

$12.970

100+ parts

-

1k+ parts

-

10k+ parts

-

136

$12.970

-

-

-

Corphita

USA . 3,586 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,586

-

-

-

-

Parana Technologies

USA . 853 parts In-Stock

1+ parts

-

100+ parts

$0.173

1k+ parts

-

10k+ parts

-

853

-

$0.173

-

-

Overview

Elevate your circuit protection with the SMC30J70A from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for unparalleled reliability, this transient suppression device ensures optimal performance across diverse applications, safeguarding sensitive electronics from voltage spikes and transients. With its robust construction and high power dissipation capability, you can trust in its quality to enhance your designs while reducing maintenance costs and improving longevity. Choose SMC30J70A and experience peace of mind in every project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making the device reliable for long-term use.

Configuration: SINGLE

A single configuration simplifies integration into circuits, reducing space requirements and making it easier to design compact solutions.

Surface Mount: YES

Surface mount capability allows for easy assembly and improved performance in high-density PCB applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

With a high power dissipation capability, this device can handle transient surges effectively, providing excellent protection.

Nominal Breakdown Voltage: 82 V

The nominal breakdown voltage allows for effective clamping of transient voltages, protecting downstream components from damage.

Maximum Reverse Current: 0.2 uA

A very low reverse current improves energy efficiency and ensures minimal impact on circuit performance.

Package Shape: RECTANGULAR

The rectangular shape offers a compact footprint, facilitating design flexibility and efficient space utilization on PCBs.

Reverse Test Voltage: 70 V

The reverse test voltage rating indicates reliability under potential fault conditions, enhancing circuit protection.

Number of Terminals: 2

Two terminals provide straightforward integration into existing designs, ensuring ease of use and compatibility.

Package Style (Meter): SMALL OUTLINE

The small outline enables high-density applications while maintaining component performance and thermal manageability.

Maximum Operating Temperature: 175 °C

The high operating temperature allows for use in demanding environments without compromising performance.

Minimum Operating Temperature: -55 °C

The wide temperature range makes this device suitable for diverse applications, including those in extreme conditions.

Terminal Position: DUAL

Dual terminal positioning aids in versatile mounting options, enhancing design flexibility.

Minimum Breakdown Voltage: 77.9 V

A minimum breakdown voltage ensures early response to surge conditions, significantly improving device protection.

Maximum Breakdown Voltage: 86.1 V

The maximum breakdown voltage further confirms the device's capability to protect against high-voltage transients.

Reference Standard: IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Compliance with established standards guarantees performance consistency and reliability in protecting against transients.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a TVS diode, it is specifically designed to protect sensitive electronics from voltage spikes effectively.

Technology: AVALANCHE

Avalanche technology provides rapid response times to voltage transients, ensuring robust protection.

Terminal Form: C BEND

C bend terminal form allows for secure mounting while maintaining a low profile, enhancing overall PCB design.

Maximum Repetitive Peak Reverse Voltage: 70 V

The maximum repetitive peak reverse voltage indicates that it can withstand frequent overvoltage conditions, making it ideal for robust applications.

Polarity: UNIDIRECTIONAL

Unidirectional clamping is effective for DC applications, ensuring devices are only protected against voltage spikes in one direction.

Maximum Clamping Voltage: 113 V

A relatively low clamping voltage ensures that sensitive components remain protected during transient events.

Diode Element Material: SILICON

Silicon material provides excellent electrical characteristics and reliability, ensuring effective performance in transient suppression.

Technical Specifications

Transient Suppression Devices SMC30J70A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

86.1 V

Minimum Breakdown Voltage:

77.9 V

Nominal Breakdown Voltage:

82 V

Maximum Clamping Voltage:

113 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

70 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMC30J70A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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