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SMC30J130CA

STMicroelectronics

SMC30J130CA by STMicroelectronics

SMC30J130CA by STMicroelectronics is a bidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, breakdown voltage range of 144-160 V, and operates b/w -55 °C to 175 °C. Perfect for applications requiring robust surge protection in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,026 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,026

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Digiode

USA . 3,275 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,275

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Anansix

USA . 2,140 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,140

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 370 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

$0.074

10k+ parts

-

370

$0.082

-

$0.074

-

MKK Technologies

India . 474 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

-

10k+ parts

-

474

$0.154

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-

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DigiPath Technology Company

USA . 474 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

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10k+ parts

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474

$0.154

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-

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AZTECH Wire

Italy . 1,045 parts In-Stock

1+ parts

$8.940

100+ parts

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1,045

$8.940

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Corphita

USA . 2,601 parts In-Stock

1+ parts

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2,601

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Parana Technologies

USA . 398 parts In-Stock

1+ parts

-

100+ parts

$0.098

1k+ parts

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398

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$0.098

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Overview

Elevate your designs with the SMC30J130CA from STMicroelectronics, a top-tier transient suppression device that ensures unparalleled protection for your sensitive electronics. With its robust design and exceptional performance, it excels in diverse applications, from consumer electronics to industrial equipment. Trust in STMicroelectronics’ legacy of quality innovation, and experience the peace of mind that comes with superior reliability and enhanced system longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the device reliable for various applications.

Config: SINGLE

This single configuration allows for simple integration into circuits, providing effective transient suppression without complexity.

Surface Mount: YES

Surface mount capability allows for compact designs and easy automated assembly in modern electronics.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

With a high power dissipation capability, this device can effectively handle transient voltages without failure.

Nominal Breakdown Voltage: 152 V

A nominal voltage of 152 V ensures that the device can protect sensitive components from reaching harmful voltage levels.

Maximum Reverse Current: 0.2 uA

The low reverse current signifies minimal leakage and improves energy efficiency, enhancing overall device performance.

Package Shape: RECTANGULAR

The rectangular package shape is advantageous for space-saving designs, allowing for efficient use of PCB real estate.

Reverse Test Voltage: 130 V

This specification confirms the device's robustness under reverse bias conditions, promoting reliability in circuit applications.

No. of Terminals: 2

Having only two terminals simplifies circuit design and connection, enhancing ease of use for engineers.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables compact layouts, making it suitable for modern, space-constrained electronic devices.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows the device to function in harsh environments, ensuring reliability under extreme conditions.

Minimum Operating Temperature: -55 °C

The ability to function at low temperatures expands its applicability to cold environments, making it versatile for different conditions.

Terminal Position: DUAL

Dual terminal positioning supports symmetrical and flexible PCB layouts, accommodating various design requirements.

Minimum Breakdown Voltage: 144 V

A minimum breakdown voltage of 144 V provides assurance that the device will activate before damage occurs to downstream components.

Maximum Breakdown Voltage: 160 V

With a maximum breakdown voltage of 160 V, this device offers a safety margin, further protecting sensitive electronics.

Reference Standard: IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Compliance with these strict standards ensures the product's reliability and effectiveness in real-world transient suppression scenarios.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a TVS diode, this device is specifically designed to protect against transient voltage spikes, offering optimal protection for circuits.

Technology: AVALANCHE

Utilizing avalanche technology enhances response time and effectiveness during transient event protection, making it highly efficient.

Terminal Form: C BEND

C bend terminals allow for easy mounting and secure connections on printed circuit boards (PCBs), improving assembly reliability.

Maximum Repetitive Peak Reverse Voltage: 130 V

This limitation ensures that the device operates within safe voltage levels, preventing damage in high-stress applications.

Polarity: BIDIRECTIONAL

The bidirectional feature allows it to handle voltage spikes in both directions, providing versatile protection in AC applications.

Maximum Clamping Voltage: 209 V

A relatively low maximum clamping voltage helps to safeguard sensitive components by limiting the voltage exposure during transients.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent conductivity and performance, contributing to the overall reliability of the device.

Technical Specifications

Transient Suppression Devices SMC30J130CA attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

160 V

Minimum Breakdown Voltage:

144 V

Nominal Breakdown Voltage:

152 V

Maximum Clamping Voltage:

209 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883

Maximum Repetitive Peak Reverse Voltage:

130 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

130 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMC30J130CA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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